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author:

Wu, Chaoxing (Wu, Chaoxing.) [1] (Scholars:吴朝兴) | Li, Fushan (Li, Fushan.) [2] (Scholars:李福山) | Guo, Tailiang (Guo, Tailiang.) [3] (Scholars:郭太良) | Qu, Bo (Qu, Bo.) [4] | Chen, Zhijian (Chen, Zhijian.) [5] | Gong, Qihuang (Gong, Qihuang.) [6]

Indexed by:

EI Scopus SCIE

Abstract:

The electrical properties of a nonvolatile organic bistable device (OBD) utilizing Au quantum dots (QDs) sandwiched between two thin insulating polyimide layers were investigated. Current- voltage (I-V) measurements on the device at room temperature showed a current bistability due to the existence of the Au QDs. The maximum ON/OFF ratio of the current bistability in the OBD was 1 x 10(8), the largest value ever reported for a stable OBD. The device has excellent endurance and retention ability in ambient conditions. The electrical properties and operating mechanisms for the device are analyzed on the basis of the I-V results. (C) 2011 The Japan Society of Applied Physics

Keyword:

Community:

  • [ 1 ] [Wu, Chaoxing]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 2 ] [Li, Fushan]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 3 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 4 ] [Qu, Bo]Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
  • [ 5 ] [Chen, Zhijian]Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China
  • [ 6 ] [Gong, Qihuang]Peking Univ, State Key Lab Mesoscop Phys, Beijing 100871, Peoples R China

Reprint 's Address:

  • 吴朝兴

    [Wu, Chaoxing]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China

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Source :

JAPANESE JOURNAL OF APPLIED PHYSICS

ISSN: 0021-4922

Year: 2011

Issue: 3

Volume: 50

1 . 0 5 8

JCR@2011

1 . 5 0 0

JCR@2023

ESI Discipline: PHYSICS;

JCR Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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