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author:

Yu, J. L. (Yu, J. L..) [1] (Scholars:俞金玲) | Lai, Y. F. (Lai, Y. F..) [2] (Scholars:赖云锋) | Wang, Y. Z. (Wang, Y. Z..) [3] | Cheng, S. Y. (Cheng, S. Y..) [4] (Scholars:程树英) | Chen, Y. H. (Chen, Y. H..) [5]

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EI Scopus SCIE

Abstract:

Polarized Raman scattering measurement on single wurtzite c-plane (001) ZnO nanorod grown by hydrothermal method has been performed at room temperature. The polarization dependence of the intensity of the Raman scattering for the phonon modes A(1)(TO), E-1(TO), and E-2(high) in the ZnO nanorod are obtained. The deviations of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules are observed, which can be attributed to the structure defects in the ZnO nanorod as confirmed by the comparison of the transmission electron microscopy, photoluminescence spectra as well as the polarization dependent Raman signal of the annealed and unannealed ZnO nanorod. The Raman tensor elements of A(1)(TO) and E-1(TO) phonon modes normalized to that of the E-2(high) phonon mode are vertical bar a/d vertical bar = 0.32 +/- 0.01, vertical bar b/d vertical bar = 0.49 +/- 0.02, and vertical bar c/d vertical bar = 0.23 +/- 0.01 for the unannealed ZnO nanorod, and vertical bar a/d vertical bar = 0.33 +/- 0.01,vertical bar b/d vertical bar = 0.45 +/- 0.01, and vertical bar c/d vertical bar = 0.20 +/- 0.01 for the annealed ZnO nanorod, which shows strong anisotropy compared to that of bulk ZnO epilayer. (C) 2014 AIP Publishing LLC.

Keyword:

Community:

  • [ 1 ] [Yu, J. L.]Fuzhou Univ, Sch Phys & Informat Engn, Inst Micro Nano Devices & Solar Cells, Fuzhou 350002, Peoples R China
  • [ 2 ] [Lai, Y. F.]Fuzhou Univ, Sch Phys & Informat Engn, Inst Micro Nano Devices & Solar Cells, Fuzhou 350002, Peoples R China
  • [ 3 ] [Wang, Y. Z.]Fuzhou Univ, Sch Phys & Informat Engn, Inst Micro Nano Devices & Solar Cells, Fuzhou 350002, Peoples R China
  • [ 4 ] [Cheng, S. Y.]Fuzhou Univ, Sch Phys & Informat Engn, Inst Micro Nano Devices & Solar Cells, Fuzhou 350002, Peoples R China
  • [ 5 ] [Chen, Y. H.]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China

Reprint 's Address:

  • 俞金玲

    [Yu, J. L.]Fuzhou Univ, Sch Phys & Informat Engn, Inst Micro Nano Devices & Solar Cells, Fuzhou 350002, Peoples R China

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Source :

JOURNAL OF APPLIED PHYSICS

ISSN: 0021-8979

Year: 2014

Issue: 3

Volume: 115

2 . 1 8 3

JCR@2014

2 . 7 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:213

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 14

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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