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author:

Yu, J.L. (Yu, J.L..) [1] | Lai, Y.F. (Lai, Y.F..) [2] | Wang, Y.Z. (Wang, Y.Z..) [3] | Cheng, S.Y. (Cheng, S.Y..) [4] | Chen, Y.H. (Chen, Y.H..) [5]

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EI

Abstract:

Polarized Raman scattering measurement on single wurtzite c-plane (001) ZnO nanorod grown by hydrothermal method has been performed at room temperature. The polarization dependence of the intensity of the Raman scattering for the phonon modes A1(TO), E1(TO), and E2high in the ZnO nanorod are obtained. The deviations of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules are observed, which can be attributed to the structure defects in the ZnO nanorod as confirmed by the comparison of the transmission electron microscopy, photoluminescence spectra as well as the polarization dependent Raman signal of the annealed and unannealed ZnO nanorod. The Raman tensor elements of A1(TO) and E1(TO) phonon modes normalized to that of the E2high phonon mode are |a/d|=0.32±0.01, |b/d|=0.49±0.02, and |c/d|=0.23±0.01 for the unannealed ZnO nanorod, and |a/d|=0.33±0.01, |b/d|=0.45±0.01, and |c/d|=0.20±0.01 for the annealed ZnO nanorod, which shows strong anisotropy compared to that of bulk ZnO epilayer. © 2014 AIP Publishing LLC.

Keyword:

High resolution transmission electron microscopy II-VI semiconductors Nanorods Phonons Photoluminescence Polarization Raman scattering Raman spectroscopy Zinc oxide Zinc sulfide

Community:

  • [ 1 ] [Yu, J.L.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 2 ] [Lai, Y.F.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 3 ] [Wang, Y.Z.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 4 ] [Cheng, S.Y.]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou, China
  • [ 5 ] [Chen, Y.H.]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China

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Source :

Journal of Applied Physics

ISSN: 0021-8979

Year: 2014

Issue: 3

Volume: 115

2 . 1 8 3

JCR@2014

2 . 7 0 0

JCR@2023

ESI HC Threshold:213

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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