Indium-tin-oxide　(ITO)　free,　nonvolatile　memory　(NVM)　devices　based　on　graphene　quantum　dots　(GQDs)　sandwiched　between　polymethylsilsesquioxane　(PMSSQ)　layers　were　fabricated　directly　on　polyethylene　terephthalate　(PET)　substrates　by　using　a　solution　process　technique.　Current-voltage　(I-V)　curves　for　the　silver　nanowire/PMSSQ/GQD/PMSSQ/poly(3,4-ethylenethiophene):poly(styrene　sulfonate)/PET　devices　at　300　K　showed　a　current　bistability.　The　ON/OFF　ratio　of　the　current　bistability　for　the　NVM　devices　was　as　large　as　1　x　10(4),　and　the　cycling　endurance　time　of　the　ON/OFF　switching　for　the　NVM　devices　was　above　1　x　10(4)　s.　The　Schottky　emission,　Poole-Frenkel　emission,　trapped-charge　limited-current,　and　space-charge-limited　current　were　dominantly　attributed　to　the　conduction　mechanisms　for　the　fabricated　NVM　devices　based　on　the　obtained　I-V　characteristics,　and　energy　band　diagrams　illustrating　the　＂writing＂　and　the　＂erasing＂　processes　of　the　devices.　(C)　2016　Elsevier　B.V.　All　rights　reserved.