Indium-tin-oxide, free, flexible, nonvolatile memory devices based on graphene quantum dots sandwiched between polymethylsilsesquioxane layers - Details

author：

Ooi, P.C. (Ooi, P.C..) ^[1] | Lin, J. (Lin, J..) ^[2] | Kim, T.W. (Kim, T.W..) ^[3] | Li, F. (Li, F..) ^[4]

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Scopus

Abstract：

Indium-tin-oxide　(ITO)　free,　nonvolatile　memory　(NVM)　devices　based　on　graphene　quantum　dots　(GQDs)　sandwiched　between　polymethylsilsesquioxane　(PMSSQ)　layers　were　fabricated　directly　on　polyethylene　terephthalate　(PET)　substrates　by　using　a　solution　process　technique.　Current-voltage　(I-V)　curves　for　the　silver　nanowire/PMSSQ/GQD/PMSSQ/poly(3,4-ethylenethiophene):poly(styrene　sulfonate)/PET　devices　at　300　K　showed　a　current　bistability.　The　ON/OFF　ratio　of　the　current　bistability　for　the　NVM　devices　was　as　large　as　1　×　104,　and　the　cycling　endurance　time　of　the　ON/OFF　switching　for　the　NVM　devices　was　above　1　×　104　s.　The　Schottky　emission,　Poole-Frenkel　emission,　trapped-charge　limited-current,　and　space-charge-limited　current　were　dominantly　attributed　to　the　conduction　mechanisms　for　the　fabricated　NVM　devices　based　on　the　obtained　I-V　characteristics,　and　energy　band　diagrams　illustrating　the　＂writing＂　and　the　＂erasing＂　processes　of　the　devices.　©　2016　Elsevier　B.V.　All　rights　reserved.

Keyword：

Conduction mechanism; Electrical characteristic; Flexible; Graphene quantum dot; Nonvolatile memory device; Polymethylsilsesquioxane

Community：

[ 1 ] [Ooi, P.C.]Department of Electronics and Computer Engineering, Hanyang University, Seoul, 133-791, South Korea
[ 2 ] [Ooi, P.C.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350002, China
[ 3 ] [Lin, J.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350002, China
[ 4 ] [Kim, T.W.]Department of Electronics and Computer Engineering, Hanyang University, Seoul, 133-791, South Korea
[ 5 ] [Li, F.]Institute of Optoelectronic Display, Fuzhou University, Fuzhou, 350002, China

Reprint 's Address：

[Kim, T.W.]Department of Electronics and Computer Engineering, Hanyang UniversitySouth Korea

Email：

twkim@hanyang.ac.kr

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Source ：

Organic Electronics

ISSN： 1566-1199

Year： 2016

Volume： 32

Page： 115-119

3 . 3 9 9

JCR@2016

2 . 7 0 0

JCR@2023

ESI HC Threshold：186

JCR Journal Grade：1

CAS Journal Grade：2

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 19

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 1

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