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Abstract：
In this work, a resistance switching memory based on organic/inorganic hybrid perovskites (OIHPs) was fabricated. The CH3NH3PbI3 perovskite was grown on polymethyl methacrylate (PMMA) as the resistance switching layer by using a two-step spin-coating procedure. The conduction mechanisms of indium-tin oxide (ITO)/PMMA/CH3NH3PbI3/PMMA/Ag device were investigated in terms of current voltage characteristics. The memory device is reprogrammable and the ON/OFF ratio reaches as high as 10(3). Endurance cycle of the as-fabricated memory device was also carried out. The results indicate the promising electronic application of OIHPs in resistance switching memories. (C) 2016 Elsevier Ltd. All rights reserved.
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VACUUM
ISSN： 0042-207X
Year： 2016
Volume： 130
Page： 109-112
1 . 5 3
JCR@2016
3 . 8 0 0
JCR@2023
ESI Discipline： MATERIALS SCIENCE;
ESI HC Threshold：324
JCR Journal Grade：3
CAS Journal Grade：4
Cited Count：
WoS CC Cited Count： 71
SCOPUS Cited Count： 76
ESI Highly Cited Papers on the List： 0 Unfold All
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30 Days PV： 0
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