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author:

Liu, Y. (Liu, Y..) [1] | Li, F. (Li, F..) [2] | Chen, Z. (Chen, Z..) [3] | Guo, T. (Guo, T..) [4] | Wu, C. (Wu, C..) [5] | Kim, T.W. (Kim, T.W..) [6]

Indexed by:

Scopus

Abstract:

In this work, a resistance switching memory based on organic/inorganic hybrid perovskites (OIHPs) was fabricated. The CH3NH3PbI3 perovskite was grown on polymethyl methacrylate (PMMA) as the resistance switching layer by using a two-step spin-coating procedure. The conduction mechanisms of indium-tin-oxide (ITO)/PMMA/CH3NH3PbI3/PMMA/Ag device were investigated in terms of current-voltage characteristics. The memory device is reprogrammable and the ON/OFF ratio reaches as high as 103. Endurance cycle of the as-fabricated memory device was also carried out. The results indicate the promising electronic application of OIHPs in resistance switching memories. © 2016 Elsevier Ltd. All rights reserved.

Keyword:

Memory; Perovskite; Resistive switching

Community:

  • [ 1 ] [Liu, Y.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 2 ] [Li, F.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 3 ] [Chen, Z.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 4 ] [Guo, T.]Institute of Optoelectronic Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 5 ] [Wu, C.]Department of Department of Electronics and Computer Engineering, Hanyang University, Seoul, 133-791, South Korea
  • [ 6 ] [Kim, T.W.]Department of Department of Electronics and Computer Engineering, Hanyang University, Seoul, 133-791, South Korea

Reprint 's Address:

  • [Li, F.]Institute of Optoelectronic Technology, Fuzhou UniversityChina

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Source :

Vacuum

ISSN: 0042-207X

Year: 2016

Volume: 130

Page: 109-112

1 . 5 3

JCR@2016

3 . 8 0 0

JCR@2023

ESI HC Threshold:324

JCR Journal Grade:3

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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