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author:

Lan, Shuqiong (Lan, Shuqiong.) [1] | Yang, Huihuang (Yang, Huihuang.) [2] | Zhang, Guocheng (Zhang, Guocheng.) [3] | Wu, Xiaomin (Wu, Xiaomin.) [4] | Chen, Qizhen (Chen, Qizhen.) [5] | Chen, Liang (Chen, Liang.) [6] | Chen, Huipeng (Chen, Huipeng.) [7] (Scholars:陈惠鹏) | Guo, Tailiang (Guo, Tailiang.) [8] (Scholars:郭太良)

Indexed by:

EI Scopus SCIE

Abstract:

Solvent vapor annealing has been widely used in organic photovoltaics (OPV) to tune the morphology of bulk heterojunction active layer for the improvement of device performance. Unfortunately, the effect of solvent removal rate (SRR) after solvent annealing, which is one of the key factors that impact resultant morphology, on the morphology and device performance of OPV has never been reported. In this work, the nanoscale morphology of small molecule (SM):fullerene bulk heterojunction (BHJ) solar cell from different SRRs after solvent annealing was examined by small-angle neutron scattering and grazing incidence X-ray scattering. The results clearly demonstrate that the nanoscale morphology of SM:fullerene BHJ especially fullerene phase separation and concentration of fullerene in noncrystalline SM was significantly impacted by the SRR The enhanced fullerene phase separation was found with a decrease of SRR, while the crystallinity and molecular packing of SM remained unchanged. Correlation to device performance shows that the balance between pure fullerene phase and mixing phase of SM and fullerene is crucial for the optimization of morphology and enhancement of device performance. Moreover, the specific interfacial area between pure fullerene phase and mixing phase is crucial for the electron transport and thus device performance. More importantly, this finding would provide a more careful and precise control of morphology of SM:fullerene BHJ and offers a guideline for further improvement of device performance with solvent annealing.

Keyword:

miscibility neutron scattering organic photovaltaics phase separation solvent annealing solvent removal rate

Community:

  • [ 1 ] [Lan, Shuqiong]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 2 ] [Yang, Huihuang]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 3 ] [Zhang, Guocheng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 4 ] [Wu, Xiaomin]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 5 ] [Chen, Qizhen]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 6 ] [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 7 ] [Guo, Tailiang]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China
  • [ 8 ] [Zhang, Guocheng]Fujian Univ Technol, Coll Informat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 9 ] [Chen, Liang]China Acad Engn Phys, Key Lab Neutron Phys, Mianyang 621900, Peoples R China
  • [ 10 ] [Chen, Liang]China Acad Engn Phys, Inst Nucl Phys & Chem, Mianyang 621900, Peoples R China

Reprint 's Address:

  • 陈惠鹏

    [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Natl & Local United Engn Lab Flat Panel Display T, Fuzhou 350002, Peoples R China

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Source :

ACS APPLIED MATERIALS & INTERFACES

ISSN: 1944-8244

Year: 2017

Issue: 24

Volume: 9

Page: 20679-20685

8 . 0 9 7

JCR@2017

8 . 5 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:306

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 16

SCOPUS Cited Count: 15

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 3

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