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author:

Chen, Huipeng (Chen, Huipeng.) [1] (Scholars:陈惠鹏) | Hsiao, Yu-Che (Hsiao, Yu-Che.) [2] | Hu, Bin (Hu, Bin.) [3] | Dadmun, Mark (Dadmun, Mark.) [4]

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EI Scopus SCIE

Abstract:

Low bandgap polymer (LBG): fullerene mixtures are some of the most promising organic photovoltaic active layers. Unfortunately, there are no post-deposition treatments available to rationally improve the morphology and performance of as-cast LBG: fullerene OPV active layers, where thermal annealing usually fails. Therefore, there is a glaring need to develop post-deposition methods to guide the morphology of LBG: fullerene bulk heterojunctions towards targeted structures and performance. In this paper, the structural evolution of PCPDTBT:PCBM mixtures with solvent annealing (SA) is examined, focusing on the effect of solvent quality of the fullerene and polymer in the annealing vapor on morphological evolution and device performance. The results indicate that exposure of this active layer to the solvent vapor controls the ordering of PCPDTBT and PCBM phase separation very effectively, presumably by inducing component mobility as the solvent plasticizes the mixture. These results also unexpectedly indicate that solvent annealing in a selective solvent provides a method to invert the morphology of the LBG: fullerene mixture from a polymer aggregate dispersed in a polymer: fullerene matrix to fullerene aggregates dispersed in a polymer: fullerene matrix. The judicious choice of solvent vapor, therefore, provides a unique method to exquisitely control and optimize the morphology of LBG conjugated polymer/fullerene mixtures.

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Community:

  • [ 1 ] [Chen, Huipeng]Univ Tennessee, Dept Chem, Knoxville, TN 37996 USA
  • [ 2 ] [Dadmun, Mark]Univ Tennessee, Dept Chem, Knoxville, TN 37996 USA
  • [ 3 ] [Chen, Huipeng]Fuzhou Univ, Inst Optoelect Display, Fuzhou 350002, Peoples R China
  • [ 4 ] [Dadmun, Mark]Oak Ridge Natl Lab, Div Chem Sci, Oak Ridge, TN 37831 USA
  • [ 5 ] [Hsiao, Yu-Che]Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA
  • [ 6 ] [Hu, Bin]Univ Tennessee, Dept Mat Sci & Engn, Knoxville, TN 37996 USA

Reprint 's Address:

  • 陈惠鹏

    [Chen, Huipeng]Univ Tennessee, Dept Chem, Knoxville, TN 37996 USA

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Source :

ADVANCED FUNCTIONAL MATERIALS

ISSN: 1616-301X

Year: 2014

Issue: 32

Volume: 24

Page: 5129-5136

1 1 . 8 0 5

JCR@2014

1 8 . 5 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:355

JCR Journal Grade:1

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count: 47

SCOPUS Cited Count: 49

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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