Developing　p-type　oxide　thin-film　transistors　(TFTs)　is　an　essential　path　for　further　application　in　complementary　metal　oxide　semiconductor　(CMOS)　components.　However,　the　inferior　electrical　performance　of　p-type　MO　TFTs　compared　to　n-type　TFTs　remains　an　ongoing　challenge.　Herein,　for　the　first　time,　a　low　temperature,　facile　material　engineering　approach　by　incorporating　n-type　nanoparticles　(NPs)　was　proposed　for　preparing　p-type　transparent　NiOx　TFTs.　The　characteristics　of　thin　films　blending　NPs　and　the　electrical　performances　of　TFTs　were　investigated.　The　field　effect　mobility　of　TFTs　with　doping　was　nearly　20　times　higher　than　pristine　TFTs　without　doping,　which　was　mainly　beneficial　from　the　suitable　band　alignment　between　NPs　and　p-type　oxide,　the　increasing　Ni3+　oxidation　state　in　NiOx,　as　well　as　the　improved　dielectric/semiconductor　interface　quality.　Electrons　from　drain　electrode　injected　into　metal　oxide　turn　accepted　in　NPs　rather　than　being　trapped　in　the　dielectric/semiconductor　interface　due　to　a　strong　surface　electron　depletion　effect　of　NPs.　NPs　with　small　particle　size　and　appropriate　concentration　would　promote　continuous　hole　transport　by　electrons　transferring　and　reducing　the　interface　trap　state.　The　facile　material　engineering　strategy　is　a　promising　technique　for　preparing　p-type　transparent　MO-TFTs　at　low　temperature,　which　showed　great　potential　to　be　applicable　in　CMOS　circuits　on　flexible　substrates.