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author:

Zhang, S. L. (Zhang, S. L..) [1] | Lin, C. F. (Lin, C. F..) [2] | Weng, Y. L. (Weng, Y. L..) [3] | He, L. C. (He, L. C..) [4] | Guo, T. L. (Guo, T. L..) [5] (Scholars:郭太良) | Zhang, Y. A. (Zhang, Y. A..) [6] (Scholars:张永爱) | Zhou, X. T. (Zhou, X. T..) [7] (Scholars:周雄图)

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Scopus SCIE

Abstract:

In this work, core-shell ZnSe/ZnS quantum dots (QDs) with excellent blue light emission were successfully synthesized in aqueous solution using thioglycolic acid as a stabilizer, thiourea as a sulphur source, and zinc acetate dihydrate as a Zn source. The crystal structure and optical properties of the as-synthesized ZnSe/ZnS QDs were characterized using X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, photoluminescence (PL) and UV-Visible spectroscopy. The ZnSe/ZnS QDs had a cubic zinc blende crystalline structure with an average particle size of approximately 4.6 nm. The excitonic emission slightly shifted to a longer wavelength and the PL intensity increased considerably with the growth of the ZnS shells. Meanwhile, the PL quantum yield of the ZnSe/ZnS QDs increased to 58.5%, which was much higher than that of ZnSe QDs. The exciton radiative lifetimes were approximately 46.3 and 23.1 ns for the core-shell ZnSe/ZnS QDs and ZnSe QDs, respectively.

Keyword:

Community:

  • [ 1 ] [Zhang, S. L.]Univ Fuzhou, Coll Phys & Informat Engn, Fuzhou 350016, Fujian, Peoples R China
  • [ 2 ] [Lin, C. F.]Univ Fuzhou, Coll Phys & Informat Engn, Fuzhou 350016, Fujian, Peoples R China
  • [ 3 ] [Weng, Y. L.]Univ Fuzhou, Coll Phys & Informat Engn, Fuzhou 350016, Fujian, Peoples R China
  • [ 4 ] [He, L. C.]Univ Fuzhou, Coll Phys & Informat Engn, Fuzhou 350016, Fujian, Peoples R China
  • [ 5 ] [Guo, T. L.]Univ Fuzhou, Coll Phys & Informat Engn, Fuzhou 350016, Fujian, Peoples R China
  • [ 6 ] [Zhang, Y. A.]Univ Fuzhou, Coll Phys & Informat Engn, Fuzhou 350016, Fujian, Peoples R China
  • [ 7 ] [Zhou, X. T.]Univ Fuzhou, Coll Phys & Informat Engn, Fuzhou 350016, Fujian, Peoples R China

Reprint 's Address:

  • 张永爱 周雄图

    [Zhang, Y. A.]Univ Fuzhou, Coll Phys & Informat Engn, Fuzhou 350016, Fujian, Peoples R China;;[Zhou, X. T.]Univ Fuzhou, Coll Phys & Informat Engn, Fuzhou 350016, Fujian, Peoples R China

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Source :

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS

ISSN: 0957-4522

Year: 2018

Issue: 19

Volume: 29

Page: 16805-16814

2 . 1 9 5

JCR@2018

2 . 8 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:284

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 11

SCOPUS Cited Count: 8

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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