Nanomaterials,　especially　quantum　dots,　have　become　one　of　the　most　great　potential　channel　transport　layer　materials　in　the　field　of　photo　detection　mainly　due　to　their　particular　light　absorption　characteristics.　However,　there　are　still　many　disadvantages　such　as　low　carrier　transport　capability　possibly　attributable　to　the　discontinuity　nature　of　materials.　Therefore,　particular　phototransistors　with　pentacene/CdSe@ZnS　QDs　composite　materials　channels　have　been　prepared　by　simply　blending　and　spin-coating　6,13-Bis(triisopropylsilylethynyl)-pentacene　(TIPS-pentacene)　and　QDs　solution　in　weight　ratio　of　3:1.　The　particular　device　architecture　with　organic/quantum　dot　composite　materials　channels　effectively　combined　the　high　carrier　mobility　advantage　of　organic　semiconductors　with　the　strong　absorption　characteristic　of　quantum　dots　in　specific　optical　band　regions　and　further　overcame　the　low　conductivity　shortcomings　of　pure　quantum　dot　materials.　The　device　with　particular　pentacene/CdSe@ZnS　QDs　composite　channel　exhibited　excellent　electrical　and　optical　properties　with　current　switch　ratio　I-on/off　of　10(4),　carriers　mobility　of　similar　to　0.161　cm(2)/V,　photosensitivity　P　of　10(5),　responsivity　R　of　0.33　mA/W　and　detectivity　D　of　1.48　x　10(11)　Jones　at　drain　voltage　of　-35　V　and　light　intensity　of　1.6　mW/cm(2),　respectively,　indicating　that　this　composite,　as　one　of　the　most　promising　channel　transport　layer　material　candidates　for　photodetector,　provides　one　chance　to　improve　the　characteristic　of　photodetector　transistors　just　by　using　hybrid　channel　technology.