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学者姓名：杨尊先
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Abstract ：
Perovskite quantum dots (PQDs) have attracted more and more attention in light-emitting diode (LED) devices due to their outstanding photoelectric properties. Surface ligands not only enable size control of quantum dots but also enhance their optoelectronic performance. However, the efficiency of exciton recombination in PQDs is often hindered by the desorption dynamics of surface ligands, leading to suboptimal electrical performance. In this study, sodium methanesulfonate (NaMeS) was successfully introduced during PQD synthesis and ligand exchange, where the S=O groups effectively interacted with the perovskite components. The NaMeS-modified PQD films exhibited significantly improved surface morphology, radiative recombination efficiency, and carrier mobility. Consequently, Pe-LEDs derived from NaMeS-capped PQDs achieved a remarkable enhancement in performance with a maximum external quantum efficiency of 9.41%. This work thus provides a novel and effective strategy for the development of high-performance PQDs and their applications in LEDs.
Keyword ：
ligand exchange ligand exchange perovskite quantumdots perovskite quantumdots radiativerecombination radiativerecombination sodium methanesulfonate sodium methanesulfonate surface passivation surface passivation
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| GB/T 7714 | Ye, Yuliang , Wang, Jiaxiang , Yang, Zunxian et al. Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices [J]. | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (4) : 6639-6647 . |
| MLA | Ye, Yuliang et al. "Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices" . | ACS APPLIED MATERIALS & INTERFACES 17 . 4 (2025) : 6639-6647 . |
| APA | Ye, Yuliang , Wang, Jiaxiang , Yang, Zunxian , Chen, Ye , Zhang, Hui , Bai, Yuting et al. Uncovering the Performance Enhancing Mechanism of Methanesulfonate Ligands in Perovskite Quantum Dots for Light-Emitting Devices . | ACS APPLIED MATERIALS & INTERFACES , 2025 , 17 (4) , 6639-6647 . |
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Quantum dot (QD) based light-emitting diode devices (QLEDs) attracted significant academic interest due to their outstanding color saturation and convenient solution-based manufacturing processes. Currently, the external quantum efficiency (EQE) of red, green, and blue QLEDs reached their own theoretical limits. However, there was still a common phenomenon of roll-off existed in QLEDs. In this work, QLEDs with an ultra low roll-off were realized via simple carrier injection regulation strategy in achieving carrier recombination balance and exhibited excellent repeatability. By modifying quantum dots and electron transport layer (ETL), the champion device with the peak EQE of 15.2 %, and a current efficiency (CE) of 63.4 cd/A was successfully fabricated, which were 1.9 and 2.0 times greater than those of the control devices, respectively. The devices delivered a peak brightness of 266,778 cd/m2, and the EQE remained at 15.0 % at a brightness of 50,000 cd/m2, staying above 14 % within the range of 3000 to 200,000 cd/m2. At a voltage of 10 V, the peak EQE of the optimized devices decreased by only 7.6 % when compared with their optimum value of EQEs, while the EQE of the control device declined by 26.6 %. Finally, analysis of 40 different batches of devices revealed an average EQE of 14.3 %, demonstrating that this strategy exhibited good repeatability. This approach provided a convenient means to regulate carrier injection and further elucidated the relationship between roll-off and carrier injection balance in QLEDs, proposing a strategy to enhance their performance and simultaneously mitigate roll-off.
Keyword ：
Low roll-off Low roll-off QLEDs QLEDs Quantum dots (QDs) Quantum dots (QDs) Repeatability Repeatability
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| GB/T 7714 | Chen, Ye , Yang, Zunxian , Wang, Jiaxiang et al. Dual optimization strategies to achieve low roll-off and stable quantum dot light-emitting diodes [J]. | OPTICAL MATERIALS , 2025 , 160 . |
| MLA | Chen, Ye et al. "Dual optimization strategies to achieve low roll-off and stable quantum dot light-emitting diodes" . | OPTICAL MATERIALS 160 (2025) . |
| APA | Chen, Ye , Yang, Zunxian , Wang, Jiaxiang , Zhang, Hui , Chen, Yue , Jiang, Xudong et al. Dual optimization strategies to achieve low roll-off and stable quantum dot light-emitting diodes . | OPTICAL MATERIALS , 2025 , 160 . |
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Abstract ：
Perovskite quantum dots (PQDs) have emerged as promising candidates for next-generation high-quality lighting and high-definition displays due to their outstanding luminescence properties, characterized by a narrow emission spectrum and tunable color. However, during the purification process involving polar solvents, ligand detachment from the quantum dot surface often induces crystal defects, thereby compromising their long-term stability. Herein, the effects of various post-processing strategies on PQD performance are systematically explored, including the use of oleic acid (OA), didodecyldimethylammonium bromide (DDAB), and their combinations, alongside OA-assisted synthesis. Furthermore, a synergistic post-processing strategy based on DDAB-NaMeS (sodium methanesulfonate) is proposed to elucidate the mechanism of ligand reconstruction on the quantum dot surface during purification. The resulting PQDs demonstrated excellent stability over a storage period exceeding one month, and the corresponding Quantum Dots Light-Emitting Diodes (QLEDs) achieved a peak external quantum efficiency (EQE) of 9.82%, representing a 1.91-fold improvement over standard devices. These QLEDs exhibited exceptional optoelectronic performance, underscoring their potential for application in other sulfonic acid ligands and perovskite-based materials.
Keyword ：
ligand exchange ligand exchange light-emitting diodes light-emitting diodes perovskite quantum dots perovskite quantum dots post-treatment post-treatment surface reconstruction surface reconstruction
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| GB/T 7714 | Wang, Jiaxiang , Yang, Zunxian , Chen, Ye et al. Sulfonic Acid Ligands Promote Surface Reconstruction of Perovskite Quantum Dots for High-Performance Light-Emitting Diodes [J]. | ADVANCED OPTICAL MATERIALS , 2025 , 13 (8) . |
| MLA | Wang, Jiaxiang et al. "Sulfonic Acid Ligands Promote Surface Reconstruction of Perovskite Quantum Dots for High-Performance Light-Emitting Diodes" . | ADVANCED OPTICAL MATERIALS 13 . 8 (2025) . |
| APA | Wang, Jiaxiang , Yang, Zunxian , Chen, Ye , Zhang, Hui , Chen, Yue , Bai, Yuting et al. Sulfonic Acid Ligands Promote Surface Reconstruction of Perovskite Quantum Dots for High-Performance Light-Emitting Diodes . | ADVANCED OPTICAL MATERIALS , 2025 , 13 (8) . |
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Molybdenum disulfide is considered an excellent anode material for lithium-ion batteries due to its unique structure and high specific capacity. However, molybdenum disulfide's inherent low ionic transport rate and low intrinsic conductivity have limited its application in lithium-ion batteries. Compounding with carbon materials is an effective way to overcome these limitations in the application of molybdenum disulfide. In this work, the effect of carbon layer on the growth of molybdenum disulfide was systematically investigated in order to disclose the role and influence of carbon in composites with molybdenum disulfide. Furthermore, our work provides an effective method for the structural optimization of one-dimensional composites based on carbon and molybdenum disulfide just by controlling the ratio of carbon precursor to molybdenum source during its formation. After structural optimization, effective MoS2@C composite materials were successfully synthesized, which exhibited greatly enhanced electrical conductivity and structural stability and maintained a specific capacity of 800.4 mA h g(-1) even after 1200 cycles at a current density of 1 A g(-1) possibly due to the excellent specific capacity of molybdenum disulfide.
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| GB/T 7714 | Cheng, Zhiming , Yang, Zunxian , Ye, Yuliang et al. Structural optimization of novel one-dimensional composites based on in situ - grown 1D CNTs with an amorphous structure and 2D MoS2 nanosheets for improved Li storage [J]. | CRYSTENGCOMM , 2024 , 26 (25) : 3370-3382 . |
| MLA | Cheng, Zhiming et al. "Structural optimization of novel one-dimensional composites based on in situ - grown 1D CNTs with an amorphous structure and 2D MoS2 nanosheets for improved Li storage" . | CRYSTENGCOMM 26 . 25 (2024) : 3370-3382 . |
| APA | Cheng, Zhiming , Yang, Zunxian , Ye, Yuliang , Ye, Songwei , Hong, Hongyi , Zeng, Zhiwei et al. Structural optimization of novel one-dimensional composites based on in situ - grown 1D CNTs with an amorphous structure and 2D MoS2 nanosheets for improved Li storage . | CRYSTENGCOMM , 2024 , 26 (25) , 3370-3382 . |
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Quantum-dot light-emitting diodes (QLED) have become a research trend in the field of new displays due to their low cost, wide color gamut, narrow bandwidth, and characteristics that enable production through the solutiongel method. However, the electrical performance of QLED is consistently constrained by energy losses and imbalanced charge carrier injection. This motivates our focus on exciton recombination and energy losses within the quantum-dot layer to enhance the electrical efficiency of QLED. In this work, we introduce a method using a CdZnS quantum dot (B-QD) interlayer to modulate energy transfer and charge carrier transport in QLED devices employing CdSe quantum dot (G-QD) as the emissive layer. By strategically incorporating a B-QD layer between the G-QD and HTL/ETL, we facilitate energy transfer due to the overlap between the excitation wavelength of BQD and the absorption wavelength of G-QDs. This leads to enhanced energy injection in QLED devices, resulting in a high current efficiency of 39.54 Cd/A and a peak brightness of 522,272 cd/m 2 for efficient QLED. The corresponding external quantum efficiency (EQE) is greatly improved from 5.62 % to 9.4 %. Our work provides a straightforward and effective approach to modulate exciton recombination and energy injection and further can be applicable to other photo-electronics devices.
Keyword ：
dot interlayer dot interlayer Energy transfer Energy transfer Modulating exciton recombination quantum Modulating exciton recombination quantum QLED QLED
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| GB/T 7714 | Meng, Zongyi , Yang, Zunxian , Ye, Yuliang et al. Highly enhanced Quantum dot light-emitting diode performance by controlling energy resonance in inorganic insertion layers [J]. | OPTICAL MATERIALS , 2024 , 152 . |
| MLA | Meng, Zongyi et al. "Highly enhanced Quantum dot light-emitting diode performance by controlling energy resonance in inorganic insertion layers" . | OPTICAL MATERIALS 152 (2024) . |
| APA | Meng, Zongyi , Yang, Zunxian , Ye, Yuliang , Zeng, Zhiwei , Hong, Hongyi , Ye, Songwei et al. Highly enhanced Quantum dot light-emitting diode performance by controlling energy resonance in inorganic insertion layers . | OPTICAL MATERIALS , 2024 , 152 . |
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Abstract ：
在"中国制造 2025"以及科教兴国的战略背景下,加强电子工科人才素质培养已成为我国提升科技产品质量和行业竞争力的关键基础和核心,也是传统电子工科专业焕发新活力的重要途径.本文以固体物理、半导体器件物理等专业基础课为例,探索电子工科背景下在其专业基础课教学中引入素质教育元素,并借助多元化创新性教学方法,进一步丰富专业基础课的理论内容,进而将其融入专业基础课的教学与实践中,从而培养并提升学生创新能力和综合素质,满足"中国制造 2025"及科教兴国背景下社会对电子工科创新型人才的需求.
Keyword ：
专业基础课 专业基础课 创新性教学改革 创新性教学改革 电子工科 电子工科 素质教育 素质教育
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| GB/T 7714 | 杨尊先 , 郭太良 . 电子工科背景下专业基础课的素质教育教学改革研究 [J]. | 山西青年 , 2024 , (11) : 64-66 . |
| MLA | 杨尊先 et al. "电子工科背景下专业基础课的素质教育教学改革研究" . | 山西青年 11 (2024) : 64-66 . |
| APA | 杨尊先 , 郭太良 . 电子工科背景下专业基础课的素质教育教学改革研究 . | 山西青年 , 2024 , (11) , 64-66 . |
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Synaptic devices of optoelectronic nature, which combine light-detection and data-storage capabilities, hold significant promise in the realm of neuromorphic computing. They are especially beneficial for the processing of visual data and the execution of intricate cognitive functions akin to learning, memory retention, and logical reasoning. However, current research is mostly confined to the level of individual devices, with corresponding studies on synaptic arrays being relatively scarce. Type II heterojunctions are widely used in optoelectronics. Bandgap engineering enables efficient separation and trapping of photogenerated excitons in selected materials, reducing carrier recombination. This prolongs carrier retention in the channel, delaying photocurrent decay, crucial for artificial optoelectronic synapses. We designed an organic nanowire/perovskite Type II heterojunction where CsPbBr3 perovskite films and TIPS nanowires serve as the photosensitive and channel layers, respectively. The composite synaptic array was successfully fabricated by in-situ growth of TIPS nanowires on the surface of perovskite thin films. It was further used to fabricate a photonic synapse array that exhibits characteristic photocurrent and stable optical response. Achieving high-performance photonic synapses was facilitated by characteristics such as high mobility and high on/off ratios, stemming from the formation of complete singlecrystal nanowires on the perovskite films. Exhibiting synaptic behaviors such as photo-induced enhancements and paired-pulse facilitation, the device enabled a visual sensing system with a 5 x 5 pixel array for simulating memory processes and restoring associative memories. A novel photocurrent model was established for understanding device characteristics. This work provides valuable insights for future utilization of composite organic nanowire arrays in simulating brain-like computations and realizing large-scale intelligent visual sensing systems.
Keyword ：
High performance High performance Low power consumption Low power consumption Patterned organic single crystals array film Patterned organic single crystals array film Perovskite films Perovskite films Small molecule semiconductor Small molecule semiconductor Synapse arrays Synapse arrays
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| GB/T 7714 | Hong, Hongyi , Yang, Zunxian , Ye, Yuliang et al. Highly uniform organic nanowire synaptic arrays with excellent performance for associative memory [J]. | CHEMICAL ENGINEERING JOURNAL , 2024 , 492 . |
| MLA | Hong, Hongyi et al. "Highly uniform organic nanowire synaptic arrays with excellent performance for associative memory" . | CHEMICAL ENGINEERING JOURNAL 492 (2024) . |
| APA | Hong, Hongyi , Yang, Zunxian , Ye, Yuliang , Ye, Songwei , Cheng, Zhiming , Zeng, Zhiwei et al. Highly uniform organic nanowire synaptic arrays with excellent performance for associative memory . | CHEMICAL ENGINEERING JOURNAL , 2024 , 492 . |
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Abstract ：
量子点（QDs）纳米晶体具备出众的窄半峰宽，且尺寸和发光波长易调节等优点，成为纳米材料领域的新星，而量子点电致发光二极管（QLED）的应用也随之得到研究人员的关注。文章的研究通过材料配比的设计，调节CdZnS-QDs的尺寸和发光波长，使其在CdSe-QDs基QLED中辅助器件的性能提升，最终能得到光致发光波长在425～455 nm的蓝紫色CdZnSQDs。使用宽带隙的CdZnS-QDs作为器件的无机插入层材料，能够对CdSe-QDs作为发光层的QLED的能带匹配、激子传递和界面修饰等进行优化。通过对比实验探索最佳的QDs合成策略，精确控制QDs的发光峰位，并将得到的结晶性强且尺寸均匀的量子点制备CdSe-QDs基电致发光器件，在发光层与无机电子传输层之间插入制备的CdZnS-QDs，得到的器件在电流密度为1000 mA/cm~2时，亮度从227188 cd/m~2提升到313775 cd/m~2，最大的电流效率达到38.1 Cd/A。该方法可以为QLED结构的设计提供新的思路。
Keyword ：
CdZnS量子点 CdZnS量子点 无机插入层 无机插入层 量子点发光二极管 量子点发光二极管
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| GB/T 7714 | 孟宗羿 , 杨尊先 , 郭太良 . 镉系量子点材料的制备及其发光二极管结构优化 [J]. | 真空科学与技术学报 , 2024 , 44 (05) : 401-408 . |
| MLA | 孟宗羿 et al. "镉系量子点材料的制备及其发光二极管结构优化" . | 真空科学与技术学报 44 . 05 (2024) : 401-408 . |
| APA | 孟宗羿 , 杨尊先 , 郭太良 . 镉系量子点材料的制备及其发光二极管结构优化 . | 真空科学与技术学报 , 2024 , 44 (05) , 401-408 . |
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二硫化钼（MoS_2）作为一种出色的二维层状材料，是锂离子电池负极的理想候选材料。然而，由于MoS_2二维层状结构的堆叠性、充放电过程中的体积膨胀以及自身的低电导率等问题，限制了其在锂离子电池中的发展。文章将MoS_2与有机碳源葡萄糖复合，合成出了MoS_2@C的复合材料，实验表明，不同含量葡萄糖碳化后形成的碳纳米管对水热生长存在MoS_2明显的影响，通过调控葡萄糖的含量合成出在碳纳米管内层生长的MoS_2@C复合材料，其具有较高的比容量，以及更好的结构稳定性，在充放电过程中的比容量衰减更小。其作为锂离子电池负极材料时，在0.2 Ag~(-1)的电流密度下循环100次后保持680.7 mAhg-1的比容量；在1 Ag~(-1)的电流密度下，循环1000次后仍可保持580.9 mAhg~(-1)的可逆比容量。同时，分析了MoS_2@C在水热过程中的硫化反应进程，为合理制备MoS_2与碳的复合材料提供新的路径。径。
Keyword ：
MoS_2 MoS_2 碳纳米管 碳纳米管 纳米线 纳米线 锂离子电池 锂离子电池
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| GB/T 7714 | 程志明 , 杨尊先 , 郭太良 . 碳纳米管包覆的MoS_2锂电负极材料制备及其性能研究 [J]. | 真空科学与技术学报 , 2024 , 44 (04) : 354-360 . |
| MLA | 程志明 et al. "碳纳米管包覆的MoS_2锂电负极材料制备及其性能研究" . | 真空科学与技术学报 44 . 04 (2024) : 354-360 . |
| APA | 程志明 , 杨尊先 , 郭太良 . 碳纳米管包覆的MoS_2锂电负极材料制备及其性能研究 . | 真空科学与技术学报 , 2024 , 44 (04) , 354-360 . |
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二硫化钼（MoS_2）以高理论容量（662 mAhg~(-1)）和较大层间距（0.62 nm）一直是锂离子电池负极材料的研究热点。然而，由于MoS_2的固有电子/离子导电率差且充放电循环过程中电极材料的体积变化严重，导致MoS_2的比容量迅速衰减，阻碍了MoS_2材料作为电池电极。在这项工作中，设计并合成了一种新型的C/SnS/MoS_2纳米管。具体来说，将Sn以Sn-MOF的形态包覆在一维的MoO3纳米带上，然后硫化得到保留了表面纳米片结构的C/SnS/MoS_2纳米管。这种制备方法不仅保留了表面的纳米片结构，也在表面留下来一层薄薄的非晶碳。得益于优越的结构设计，且SnS与MoS_2存在着协同作用，这不仅提高了导电性，并且也提升了电池循环的稳定性。做为电极材料时，复合材料能够在0.1 Ag~(-1)电流密度下80次循环后还保持着1110.2 mAhg~(-1)的放电比容量，在2 Ag~(-1)大电流密度下860次循环后保持801.7 mAhg~(-1)的放电比容量。
Keyword ：
Sn-MOF Sn-MOF 一维纳米材料 一维纳米材料 分级结构 分级结构 锂离子电池 锂离子电池
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| GB/T 7714 | 叶淞玮 , 杨尊先 , 郭太良 . 基于Sn-MOF组装的C/SnS/MoS_2纳米管及其锂离子电池性能研究 [J]. | 真空科学与技术学报 , 2024 , 44 (04) : 341-349 . |
| MLA | 叶淞玮 et al. "基于Sn-MOF组装的C/SnS/MoS_2纳米管及其锂离子电池性能研究" . | 真空科学与技术学报 44 . 04 (2024) : 341-349 . |
| APA | 叶淞玮 , 杨尊先 , 郭太良 . 基于Sn-MOF组装的C/SnS/MoS_2纳米管及其锂离子电池性能研究 . | 真空科学与技术学报 , 2024 , 44 (04) , 341-349 . |
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