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学者姓名：杨尊先
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Abstract ：
Cadmium selenide (CdSe)-based colloidal quantum dots (QDs) exhibit unique properties such as tunable colors, narrow emission, high photoluminescence efficiency, and high stability, making them one of the most promising candidates for next-generation displays. CdSe-based QD light-emitting diodes (QLEDs) have attracted more and more attention mainly due to their advantages including high electroluminescence brightness, low turn-on voltage, and ultrathin device structures. However, there are still many challenges, mainly including the lattice defects aroused by lattice strain during the QD growth process and the surface defects caused by ligand desorption. CdSe-based QLEDs with high photoelectronic performance were finally achieved in our work just by optimizing the synthesis processes and further reducing defects in QD shells. There was a great decrease in the defect density of the QD shell indirectly according to their testing results in the fluorescence lifetime and single-carrier devices. After the reaction system was diluted with a solvent in the hot-injection method, there was some blue shift in the QD emission observed from 595 to 562 nm. Then, with the ZnSe shell further coated onto the QD, the size of the effective emission center was reduced to some extent, and further, a blue shift in the emission was obtained with the wavelength down to 533 nm. Finally, on the outside of the as-synthesized QDs, the ZnS shell was used to passivate and further protect the ZnSe layer, which greatly increased the average fluorescence lifetime of the CdSe-based QDs from 22.94 to 36.41 ns. Additionally, a layer of lithium fluoride (LiF) with optimized thickness was further deposited onto the QD emitting layer to prevent ligand desorption from ethanol solvent cleaning. Therefore, the CdSe-based QD fluorescence efficiency was greatly improved and the maximum external quantum efficiency (EQE) of 8.06% for our CdSe-based QLEDs was achieved with a LiF layer of 3 nm.
Keyword ：
CdZnSe quantum dots (QDs) CdZnSe quantum dots (QDs) defect state control defect state control LiF film LiF film nucleation control nucleation control QLED QLED
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| GB/T 7714 | Huang, Qiaocan , Yang, Zunxian , Ye, Yuliang et al. Physically Controlled Nucleation for Tunable Quantum Dots and Interface Defect Modification in Light-Emitting Diodes [J]. | ACS APPLIED NANO MATERIALS , 2024 , 7 (2) : 1896-1906 . |
| MLA | Huang, Qiaocan et al. "Physically Controlled Nucleation for Tunable Quantum Dots and Interface Defect Modification in Light-Emitting Diodes" . | ACS APPLIED NANO MATERIALS 7 . 2 (2024) : 1896-1906 . |
| APA | Huang, Qiaocan , Yang, Zunxian , Ye, Yuliang , Meng, Zongyi , Zeng, Zhiwei , Hong, Hongyi et al. Physically Controlled Nucleation for Tunable Quantum Dots and Interface Defect Modification in Light-Emitting Diodes . | ACS APPLIED NANO MATERIALS , 2024 , 7 (2) , 1896-1906 . |
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二硫化钼（MoS_2）作为一种出色的二维层状材料，是锂离子电池负极的理想候选材料。然而，由于MoS_2二维层状结构的堆叠性、充放电过程中的体积膨胀以及自身的低电导率等问题，限制了其在锂离子电池中的发展。文章将MoS_2与有机碳源葡萄糖复合，合成出了MoS_2@C的复合材料，实验表明，不同含量葡萄糖碳化后形成的碳纳米管对水热生长存在MoS_2明显的影响，通过调控葡萄糖的含量合成出在碳纳米管内层生长的MoS_2@C复合材料，其具有较高的比容量，以及更好的结构稳定性，在充放电过程中的比容量衰减更小。其作为锂离子电池负极材料时，在0.2 Ag~(-1)的电流密度下循环100次后保持680.7 mAhg-1的比容量；在1 Ag~(-1)的电流密度下，循环1000次后仍可保持580.9 mAhg~(-1)的可逆比容量。同时，分析了MoS_2@C在水热过程中的硫化反应进程，为合理制备MoS_2与碳的复合材料提供新的路径。径。
Keyword ：
MoS_2 MoS_2 碳纳米管 碳纳米管 纳米线 纳米线 锂离子电池 锂离子电池
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| GB/T 7714 | 程志明 , 杨尊先 , 郭太良 . 碳纳米管包覆的MoS_2锂电负极材料制备及其性能研究 [J]. | 真空科学与技术学报 , 2024 , 44 (04) : 354-360 . |
| MLA | 程志明 et al. "碳纳米管包覆的MoS_2锂电负极材料制备及其性能研究" . | 真空科学与技术学报 44 . 04 (2024) : 354-360 . |
| APA | 程志明 , 杨尊先 , 郭太良 . 碳纳米管包覆的MoS_2锂电负极材料制备及其性能研究 . | 真空科学与技术学报 , 2024 , 44 (04) , 354-360 . |
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二硫化钼（MoS_2）以高理论容量（662 mAhg~(-1)）和较大层间距（0.62 nm）一直是锂离子电池负极材料的研究热点。然而，由于MoS_2的固有电子/离子导电率差且充放电循环过程中电极材料的体积变化严重，导致MoS_2的比容量迅速衰减，阻碍了MoS_2材料作为电池电极。在这项工作中，设计并合成了一种新型的C/SnS/MoS_2纳米管。具体来说，将Sn以Sn-MOF的形态包覆在一维的MoO3纳米带上，然后硫化得到保留了表面纳米片结构的C/SnS/MoS_2纳米管。这种制备方法不仅保留了表面的纳米片结构，也在表面留下来一层薄薄的非晶碳。得益于优越的结构设计，且SnS与MoS_2存在着协同作用，这不仅提高了导电性，并且也提升了电池循环的稳定性。做为电极材料时，复合材料能够在0.1 Ag~(-1)电流密度下80次循环后还保持着1110.2 mAhg~(-1)的放电比容量，在2 Ag~(-1)大电流密度下860次循环后保持801.7 mAhg~(-1)的放电比容量。
Keyword ：
Sn-MOF Sn-MOF 一维纳米材料 一维纳米材料 分级结构 分级结构 锂离子电池 锂离子电池
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| GB/T 7714 | 叶淞玮 , 杨尊先 , 郭太良 . 基于Sn-MOF组装的C/SnS/MoS_2纳米管及其锂离子电池性能研究 [J]. | 真空科学与技术学报 , 2024 , 44 (04) : 341-349 . |
| MLA | 叶淞玮 et al. "基于Sn-MOF组装的C/SnS/MoS_2纳米管及其锂离子电池性能研究" . | 真空科学与技术学报 44 . 04 (2024) : 341-349 . |
| APA | 叶淞玮 , 杨尊先 , 郭太良 . 基于Sn-MOF组装的C/SnS/MoS_2纳米管及其锂离子电池性能研究 . | 真空科学与技术学报 , 2024 , 44 (04) , 341-349 . |
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Domain distribution, defect density as well as carrier transport all exert some great impact on the performance of quasi-two-dimensional (quasi -2D) perovskites light emitting diodes (PeLEDs). Herein, the novelty multifunctional metformin hydrochloride (MFCl) buried passivated layer was introduced to optimize the crystal dynamics, surface morphology, and electro-luminescent properties of the quasi -2D perovskites. On the one hand, MF ion to some extent optimized the domain distribution just by both decreasing the n = 2 phase and increasing the threedimensional (3D) phase, which facilitated the charge funnelling. On the other hand, by combining MFCl with PSS or PSS-Na, the energy level of the hole transport layer was effectively adjusted, resulting in an obvious reduction of the injection barrier. As a result, the MFCl-optimized blue quasi -2D PeLEDs with the maximum external quantum efficiency of 5.22 % was achieved, which is 3.6 times higher than that of the device without the MFCl treatment. This work provided favourable strategy for the performance enhancement of blue quasi -2D PeLEDs, in which a multifunction interface was introduced to synchronously improve the phase distribution as well as the defect passivation of quasi -2D perovskite, meanwhile all of those further promoted the charge transportation.
Keyword ：
Blue emitting device Blue emitting device Multifunctional Interface Multifunctional Interface Oriented Crystallization Oriented Crystallization Quasi-2D Perovskite Quasi-2D Perovskite
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| GB/T 7714 | Ye, Yuliang , Cui, Zhou , Yang, Zunxian et al. A multifunctional interface optimization strategy for efficient Quasi-2D blue perovskite Light-Emitting diodes [J]. | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 . |
| MLA | Ye, Yuliang et al. "A multifunctional interface optimization strategy for efficient Quasi-2D blue perovskite Light-Emitting diodes" . | CHEMICAL ENGINEERING JOURNAL 483 (2024) . |
| APA | Ye, Yuliang , Cui, Zhou , Yang, Zunxian , Zeng, Zhiwei , Meng, Zongyi , Hong, Hongyi et al. A multifunctional interface optimization strategy for efficient Quasi-2D blue perovskite Light-Emitting diodes . | CHEMICAL ENGINEERING JOURNAL , 2024 , 483 . |
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Molybdenum disulfide is considered an excellent anode material for lithium-ion batteries due to its unique structure and high specific capacity. However, molybdenum disulfide's inherent low ionic transport rate and low intrinsic conductivity have limited its application in lithium-ion batteries. Compounding with carbon materials is an effective way to overcome these limitations in the application of molybdenum disulfide. In this work, the effect of carbon layer on the growth of molybdenum disulfide was systematically investigated in order to disclose the role and influence of carbon in composites with molybdenum disulfide. Furthermore, our work provides an effective method for the structural optimization of one-dimensional composites based on carbon and molybdenum disulfide just by controlling the ratio of carbon precursor to molybdenum source during its formation. After structural optimization, effective MoS2@C composite materials were successfully synthesized, which exhibited greatly enhanced electrical conductivity and structural stability and maintained a specific capacity of 800.4 mA h g(-1) even after 1200 cycles at a current density of 1 A g(-1) possibly due to the excellent specific capacity of molybdenum disulfide.
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| GB/T 7714 | Cheng, Zhiming , Yang, Zunxian , Ye, Yuliang et al. Structural optimization of novel one-dimensional composites based on in situ - grown 1D CNTs with an amorphous structure and 2D MoS2 nanosheets for improved Li storage [J]. | CRYSTENGCOMM , 2024 , 26 (25) : 3370-3382 . |
| MLA | Cheng, Zhiming et al. "Structural optimization of novel one-dimensional composites based on in situ - grown 1D CNTs with an amorphous structure and 2D MoS2 nanosheets for improved Li storage" . | CRYSTENGCOMM 26 . 25 (2024) : 3370-3382 . |
| APA | Cheng, Zhiming , Yang, Zunxian , Ye, Yuliang , Ye, Songwei , Hong, Hongyi , Zeng, Zhiwei et al. Structural optimization of novel one-dimensional composites based on in situ - grown 1D CNTs with an amorphous structure and 2D MoS2 nanosheets for improved Li storage . | CRYSTENGCOMM , 2024 , 26 (25) , 3370-3382 . |
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Synaptic devices of optoelectronic nature, which combine light-detection and data-storage capabilities, hold significant promise in the realm of neuromorphic computing. They are especially beneficial for the processing of visual data and the execution of intricate cognitive functions akin to learning, memory retention, and logical reasoning. However, current research is mostly confined to the level of individual devices, with corresponding studies on synaptic arrays being relatively scarce. Type II heterojunctions are widely used in optoelectronics. Bandgap engineering enables efficient separation and trapping of photogenerated excitons in selected materials, reducing carrier recombination. This prolongs carrier retention in the channel, delaying photocurrent decay, crucial for artificial optoelectronic synapses. We designed an organic nanowire/perovskite Type II heterojunction where CsPbBr3 perovskite films and TIPS nanowires serve as the photosensitive and channel layers, respectively. The composite synaptic array was successfully fabricated by in-situ growth of TIPS nanowires on the surface of perovskite thin films. It was further used to fabricate a photonic synapse array that exhibits characteristic photocurrent and stable optical response. Achieving high-performance photonic synapses was facilitated by characteristics such as high mobility and high on/off ratios, stemming from the formation of complete singlecrystal nanowires on the perovskite films. Exhibiting synaptic behaviors such as photo-induced enhancements and paired-pulse facilitation, the device enabled a visual sensing system with a 5 x 5 pixel array for simulating memory processes and restoring associative memories. A novel photocurrent model was established for understanding device characteristics. This work provides valuable insights for future utilization of composite organic nanowire arrays in simulating brain-like computations and realizing large-scale intelligent visual sensing systems.
Keyword ：
High performance High performance Low power consumption Low power consumption Patterned organic single crystals array film Patterned organic single crystals array film Perovskite films Perovskite films Small molecule semiconductor Small molecule semiconductor Synapse arrays Synapse arrays
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| GB/T 7714 | Hong, Hongyi , Yang, Zunxian , Ye, Yuliang et al. Highly uniform organic nanowire synaptic arrays with excellent performance for associative memory [J]. | CHEMICAL ENGINEERING JOURNAL , 2024 , 492 . |
| MLA | Hong, Hongyi et al. "Highly uniform organic nanowire synaptic arrays with excellent performance for associative memory" . | CHEMICAL ENGINEERING JOURNAL 492 (2024) . |
| APA | Hong, Hongyi , Yang, Zunxian , Ye, Yuliang , Ye, Songwei , Cheng, Zhiming , Zeng, Zhiwei et al. Highly uniform organic nanowire synaptic arrays with excellent performance for associative memory . | CHEMICAL ENGINEERING JOURNAL , 2024 , 492 . |
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在"中国制造 2025"以及科教兴国的战略背景下,加强电子工科人才素质培养已成为我国提升科技产品质量和行业竞争力的关键基础和核心,也是传统电子工科专业焕发新活力的重要途径.本文以固体物理、半导体器件物理等专业基础课为例,探索电子工科背景下在其专业基础课教学中引入素质教育元素,并借助多元化创新性教学方法,进一步丰富专业基础课的理论内容,进而将其融入专业基础课的教学与实践中,从而培养并提升学生创新能力和综合素质,满足"中国制造 2025"及科教兴国背景下社会对电子工科创新型人才的需求.
Keyword ：
专业基础课 专业基础课 创新性教学改革 创新性教学改革 电子工科 电子工科 素质教育 素质教育
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| GB/T 7714 | 杨尊先 , 郭太良 . 电子工科背景下专业基础课的素质教育教学改革研究 [J]. | 山西青年 , 2024 , (11) : 64-66 . |
| MLA | 杨尊先 et al. "电子工科背景下专业基础课的素质教育教学改革研究" . | 山西青年 11 (2024) : 64-66 . |
| APA | 杨尊先 , 郭太良 . 电子工科背景下专业基础课的素质教育教学改革研究 . | 山西青年 , 2024 , (11) , 64-66 . |
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Quantum-dot light-emitting diodes (QLED) have become a research trend in the field of new displays due to their low cost, wide color gamut, narrow bandwidth, and characteristics that enable production through the solutiongel method. However, the electrical performance of QLED is consistently constrained by energy losses and imbalanced charge carrier injection. This motivates our focus on exciton recombination and energy losses within the quantum-dot layer to enhance the electrical efficiency of QLED. In this work, we introduce a method using a CdZnS quantum dot (B-QD) interlayer to modulate energy transfer and charge carrier transport in QLED devices employing CdSe quantum dot (G-QD) as the emissive layer. By strategically incorporating a B-QD layer between the G-QD and HTL/ETL, we facilitate energy transfer due to the overlap between the excitation wavelength of BQD and the absorption wavelength of G-QDs. This leads to enhanced energy injection in QLED devices, resulting in a high current efficiency of 39.54 Cd/A and a peak brightness of 522,272 cd/m 2 for efficient QLED. The corresponding external quantum efficiency (EQE) is greatly improved from 5.62 % to 9.4 %. Our work provides a straightforward and effective approach to modulate exciton recombination and energy injection and further can be applicable to other photo-electronics devices.
Keyword ：
dot interlayer dot interlayer Energy transfer Energy transfer Modulating exciton recombination quantum Modulating exciton recombination quantum QLED QLED
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| GB/T 7714 | Meng, Zongyi , Yang, Zunxian , Ye, Yuliang et al. Highly enhanced Quantum dot light-emitting diode performance by controlling energy resonance in inorganic insertion layers [J]. | OPTICAL MATERIALS , 2024 , 152 . |
| MLA | Meng, Zongyi et al. "Highly enhanced Quantum dot light-emitting diode performance by controlling energy resonance in inorganic insertion layers" . | OPTICAL MATERIALS 152 (2024) . |
| APA | Meng, Zongyi , Yang, Zunxian , Ye, Yuliang , Zeng, Zhiwei , Hong, Hongyi , Ye, Songwei et al. Highly enhanced Quantum dot light-emitting diode performance by controlling energy resonance in inorganic insertion layers . | OPTICAL MATERIALS , 2024 , 152 . |
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Molybdenum disulfide (MoS2) has been the focus of research on anode materials for lithium-ion batteries with its high theoretical capacity (662 mAhg−1) and large layer spacing (0.62 nm). However, due to the poor inherent electronic/ionic conductivity of MoS2 and the serious change in the volume of the electrode material during the charge-discharge cycle, the specific capacity of MoS2 rapidly decays, hindering the MoS2 material as a battery electrode. In this work, a novel C/SnS/MoS2 nanotube was designed and synthesized. Specifically, Sn was coated with Sn-MOF on one-dimensional MoO3 nanoribbons, and then vulcanized to obtain C/SnS/MoS2 nanotubes that retained the surface nanosheet structure. This preparation method not only retains the nanosheet structure of the surface but also leaves a thin layer of amorphous carbon on the surface. Thanks to the superior structural design, there is a synergy between SnS and MoS2, which not only improves the conductivity but also improves the stability of the battery cycle. When used as electrode material, the composite can maintain 1110.2 mAhg−1 discharge specific capacity after 80 cycles at 0.1 Ag−1 current density and 801.7 mAhg−1 discharge specific capacity after 860 cycles at 2 Ag−1 high current density. © 2024 Chinese Vacuum Society. All rights reserved.
Keyword ：
1D nanomaterials 1D nanomaterials Hierarchical structure Hierarchical structure Lithium ion batteries Lithium ion batteries Sn-MOF Sn-MOF
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| GB/T 7714 | Ye, S. , Yang, Z. , Guo, T. . Lithium-Ion Batteries Properties of C/SnS/MoS2 Hierarchical Nanotubes Constructed from Tin-Based MOF; [基于 Sn-MOF 组装的 C/SnS/MoS2 纳米管及其锂离子电池性能研究] [J]. | Journal of Vacuum Science and Technology , 2024 , 44 (4) : 341-349 . |
| MLA | Ye, S. et al. "Lithium-Ion Batteries Properties of C/SnS/MoS2 Hierarchical Nanotubes Constructed from Tin-Based MOF; [基于 Sn-MOF 组装的 C/SnS/MoS2 纳米管及其锂离子电池性能研究]" . | Journal of Vacuum Science and Technology 44 . 4 (2024) : 341-349 . |
| APA | Ye, S. , Yang, Z. , Guo, T. . Lithium-Ion Batteries Properties of C/SnS/MoS2 Hierarchical Nanotubes Constructed from Tin-Based MOF; [基于 Sn-MOF 组装的 C/SnS/MoS2 纳米管及其锂离子电池性能研究] . | Journal of Vacuum Science and Technology , 2024 , 44 (4) , 341-349 . |
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直接存储存取是一种在各个模块间进行大量数据传输的高速度、高效率的传输方式.在CPU对DMA进行初始化配置后,允许DMA作为主机占用总线,直接对外围设备和存储器的数据进行读写,实现外设和存储器、存储器和存储器之间的数据传输,不再需要CPU的干预,可以解放CPU,极大提高数据传输效率.本文旨在基于AHB总线协议的双通道DMA控制器实现外设与存储器之间的数据传输.
Keyword ：
AHB AHB FPGA FPGA SoC SoC Vivado2018 Vivado2018 直接存储存取 直接存储存取
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| GB/T 7714 | 蓝倩婷 , 杨尊先 , 王法翔 . 基于AHB总线的双通道DMA控制器的系统设计 [J]. | 集成电路与嵌入式系统 , 2024 , 24 (4) : 47-50 . |
| MLA | 蓝倩婷 et al. "基于AHB总线的双通道DMA控制器的系统设计" . | 集成电路与嵌入式系统 24 . 4 (2024) : 47-50 . |
| APA | 蓝倩婷 , 杨尊先 , 王法翔 . 基于AHB总线的双通道DMA控制器的系统设计 . | 集成电路与嵌入式系统 , 2024 , 24 (4) , 47-50 . |
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