Deep　silicon　microstructures　are　pivotal　in　advancing　modern　device　technologies,　enabling　critical　components　such　as　trench　gates,　p-n　junctions,　deep　trench　isolation,　through-silicon　vias,　and　dicing.　The　fabrication　of　these　structures　is　primarily　achieved　through　plasma　etching　and　electrochemistry-enhanced　wet　etching.　Key　performance　metrics,　such　as　aspect　ratio,　profile　accuracy,　etch　rate,　and　etch　rate　uniformity,　are　essential　for　evaluating　the　quality　of　the　etching　process.　Challenges　such　as　etch　rate　non-uniformity,　which　manifests　as　microtrenching,　loading　effects,　aspect　ratio-dependent　etching,　and　tilt　effects,　require　careful　consideration.　In　plasma　etching,　selectivity　and　scallop　size　are　additional　critical　factors.　Advanced　simulation　tools　play　an　essential　role　in　optimizing　etching　processes　and　predicting　outcomes,　enhancing　efficiency　and　accuracy.　As　technological　demands　evolve,　deep　silicon　microstructures　will　remain　integral　to　driving　innovation　in　semiconductor　and　microdevice　fabrication.