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author:

Deng, Qian (Deng, Qian.) [1] | Tan, Xiaobo (Tan, Xiaobo.) [2] | Wen, Jiansen (Wen, Jiansen.) [3] | Li, Ruiheng (Li, Ruiheng.) [4] | Luo, Jiaxing (Luo, Jiaxing.) [5] | Xie, Yin (Xie, Yin.) [6] | Zhao, Zhilong (Zhao, Zhilong.) [7] | Sa, Baisheng (Sa, Baisheng.) [8] | Ang, Ran (Ang, Ran.) [9]

Indexed by:

EI

Abstract:

The relatively lower performance of n-type legs has significantly hindered the application of PbTe materials in medium-temperature thermoelectric (TE) power generation, underscoring the urgent need to enhance the TE performance of n-type PbTe. In this study, electron-phonon decoupling was achieved through the precise manipulation of a single copper-doping element in PbTe (i.e., Pb1.005-xCu2x+0.003Te), enabling the concurrent optimization of phonon transport and electrical properties. High-content Cu doping induced substantial lattice strain and abundant precipitates, which effectively scattered heat-carrying phonons and significantly reduced lattice thermal conductivity. Simultaneously, the retention of high mobility and the self-regulation of electron concentration improved electrical performance across a broad temperature range. As a result, an impressive average zT of 1.3 was achieved from 523 to 823 K in n-type Pb0.985Cu0.043Te. Building on this, a seven-pair TE module was fabricated, attaining an energy conversion efficiency of ∼8 % under a temperature difference of 420 K. This work provides fresh insights into strategies for enhancing the TE performance of n-type PbTe. © 2025

Keyword:

Carrier concentration Copper alloys Crystal lattices Crystallites Electron-phonon interactions Energy conversion efficiency Germanium alloys II-VI semiconductors IV-VI semiconductors Layered semiconductors Lead alloys Nanocrystals Narrow band gap semiconductors Phonon scattering Selenium compounds Semiconductor doping Tellurium compounds Thermal conductivity of solids Thermoelectric energy conversion Tin alloys Wide band gap semiconductors

Community:

  • [ 1 ] [Deng, Qian]Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu; 610064, China
  • [ 2 ] [Tan, Xiaobo]Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu; 610064, China
  • [ 3 ] [Wen, Jiansen]Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 4 ] [Li, Ruiheng]Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu; 610064, China
  • [ 5 ] [Luo, Jiaxing]Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu; 610064, China
  • [ 6 ] [Xie, Yin]Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu; 610064, China
  • [ 7 ] [Zhao, Zhilong]Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu; 610064, China
  • [ 8 ] [Sa, Baisheng]Multiscale Computational Materials Facility & Materials Genome Institute, School of Materials Science and Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 9 ] [Ang, Ran]Key Laboratory of Radiation Physics and Technology, Ministry of Education, Institute of Nuclear Science and Technology, Sichuan University, Chengdu; 610064, China
  • [ 10 ] [Ang, Ran]Institute of New Energy and Low-Carbon Technology, Sichuan University, Chengdu; 610065, China

Reprint 's Address:

  • [sa, baisheng]multiscale computational materials facility & materials genome institute, school of materials science and engineering, fuzhou university, fuzhou; 350108, china

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Source :

Journal of Materials Science and Technology

ISSN: 1005-0302

Year: 2025

Volume: 236

Page: 86-94

1 1 . 2 0 0

JCR@2023

CAS Journal Grade:1

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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