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author:

Yang, Bingqing (Yang, Bingqing.) [1] | Xu, Wei (Xu, Wei.) [2] | Zhang, Yu (Zhang, Yu.) [3] | Xu, Zedong (Xu, Zedong.) [4] | Wu, Shizhe (Wu, Shizhe.) [5] | Wu, Xiao (Wu, Xiao.) [6] | Zhao, Chunlin (Zhao, Chunlin.) [7] | Lin, Tengfei (Lin, Tengfei.) [8] | Gao, Min (Gao, Min.) [9] | Lin, Cong (Lin, Cong.) [10]

Indexed by:

EI Scopus SCIE

Abstract:

Lead-free AgNbO3-based antiferroelectric (AFE) ceramics have attracted increasing interest owing to their environmentally friendly nature and excellent potential in energy storage devices. However, the poor breakdown strength (BDS) of AgNbO3 limits its practical application. Herein, the Mn/Sm-codoing strategy and the tape- casting technique were utilized to improve the BDS of AgNbO3-based ceramics to 320 kV cm- 1 , which is almost 1.8 and 1.6 times greater than that of doped AgNbO3 prepared by solid-state reaction and that of pure AgNbO3 prepared by the tape-casting method, respectively. The relatively high BDS is attributed to the improved density, the grain size reduction and the decrease of concentration of oxygen vacancies. As a result, a high energy storage density of 5.18 J cm- 3 with an efficiency of 73.3 % were observed. Our research enriches the fabrication strategy of lead-free AFE ceramics with high BDS and contributes to the applications of AFE-based energy storage devices.

Keyword:

Antiferroelectrics Breakdown strength Energy storage Phase transition Silver niobate

Community:

  • [ 1 ] [Yang, Bingqing]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 2 ] [Xu, Wei]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 3 ] [Wu, Xiao]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 4 ] [Zhao, Chunlin]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 5 ] [Lin, Tengfei]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 6 ] [Gao, Min]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 7 ] [Lin, Cong]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China
  • [ 8 ] [Zhang, Yu]Hunan Univ, Coll Semicond, Coll Integrated Circuits, Int Sci & Technol Innovat Cooperat Base Adv Displa, Changsha 410082, Peoples R China
  • [ 9 ] [Xu, Zedong]Tiangong Univ, Inst Quantum Mat & Devices, Sch Elect & Informat Engn, Tianjin 300387, Peoples R China
  • [ 10 ] [Wu, Shizhe]Tiangong Univ, Sch Mat Sci & Engn, Tianjin 300387, Peoples R China

Reprint 's Address:

  • [Gao, Min]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China;;[Lin, Cong]Fuzhou Univ, Coll Mat Sci & Engn, Fuzhou 350108, Peoples R China

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Source :

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY

ISSN: 0955-2219

Year: 2025

Issue: 7

Volume: 45

5 . 8 0 0

JCR@2023

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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