Depolarization Field Engineered Ferroelectric Mechanical Transistor With 0.3-Volts VDD - Details

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Abstract：

We　propose　a　novel　technology　called　depolarization　field　engineered　ferroelectric　mechanical　transistor　(Fe-MT),　which　achieves　an　exceptionally　low　operating　voltage　(　VDD)　of　0.3　volts.　This　achievement　of　VDD　scaling　is　made　possible　by　utilizing　depolarization　voltage　with　an　amplitude　of　11/-11.1　V　for　the　pre-shrinkage　of　contact　gap　(　gC)　[Fig.　1],　which　is　activated　by　a　+　63/-66　V　pulse　stimulus.　Additionally,　our　Fe-MTs　maintain　the　device-level　reconfigurability　between　N/P　modes.　This　exciting　development　suggests　that　our　Fe-MTs　can　serve　as　the　fundamental　building　blocks　for　future　generations　of　integrated　circuits　with　high　energy　and　area-efficiency.　　©　1980-2012　IEEE.

Keyword：

depolarization field Ferroelectric micro-electro-mechanical (MEM) operating voltage reconfigurability

Community：

[ 1 ] [Cui M.]Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China
[ 2 ] [Cui M.]Xidian University, School of Microelectronics, Xi'an, 710126, China
[ 3 ] [Zhou J.]Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China
[ 4 ] [Zhou J.]Xidian University, School of Microelectronics, Xi'an, 710126, China
[ 5 ] [Zheng S.]Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China
[ 6 ] [Zheng S.]Xidian University, School of Microelectronics, Xi'an, 710126, China
[ 7 ] [Liu N.]Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China
[ 8 ] [Liu N.]Xidian University, School of Microelectronics, Xi'an, 710126, China
[ 9 ] [Liang J.]Shanghai University, School of Microelectronics, Shanghai, 201800, China
[ 10 ] [Hu W.]Fuzhou University, College of Physics and Information Engineering, Fuzhou, 350108, China
[ 11 ] [Liu Y.]Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China
[ 12 ] [Liu Y.]Xidian University, School of Microelectronics, Xi'an, 710126, China
[ 13 ] [Hao Y.]Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China
[ 14 ] [Hao Y.]Xidian University, School of Microelectronics, Xi'an, 710126, China
[ 15 ] [Han G.]Hangzhou Institute of Technology, Xidian University, Hangzhou, 311200, China
[ 16 ] [Han G.]Xidian University, School of Microelectronics, Xi'an, 710126, China

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Source ：

IEEE Electron Device Letters

ISSN： 0741-3106

Year： 2023

Issue： 12

Volume： 44

Page： 2063-2066

4 . 1

JCR@2023

4 . 1 0 0

JCR@2023

JCR Journal Grade：2

CAS Journal Grade：2

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ESI Highly Cited Papers on the List： 0 Unfold All

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