A　technique　for　the　transfer-free　growth　of　2-inch　wafer-scale　patterned　graphene　directly　on　GaN　LED　epilayers　is　introduced.　High-quality　graphene　as　transparent　electrodes　and　heat　spreaders　is　synthesized　directly　on　GaN　by　PECVD　at　only　600　degrees　C　deposition　temperature　and　within　3　min　growth　time.　Co　acts　as　both　the　catalyst　for　graphene　growth　and　the　dry　etching　mask　for　GaN　mesas,　which　greatly　improves　the　efficiency　of　the　semiconductor　device　process.　Elegantly,　the　graphene　growth　is　in　accordance　with　the　shape　of　Co,　which　offers　a　lithography-free　patterning　technique　of　the　graphene.　Afterward,　using　our　penetration　etching　method　through　the　PMMA　and　graphene　layers,　the　Co　is　peacefully　removed,　and　in-situ　Ohmic　contact　is　achieved　between　the　graphene　and　p-GaN　where　the　contact　resistivity　is　only　0.421　Omega　cm(2).　The　graphene　sheet　resistance　is　as　low　as　631.2　Omega　sq(-1).　The　device　is　also　superior　to　the　counterpart　graphene-free　LED　in　terms　of　heat　spreading　behavior,　as　evidenced　by　the　lower　junction　temperature　and　thermal　resistance.　Most　importantly,　the　developed　technique　produces　graphene　with　excellent　performance　and　is　intrinsically　more　scalable,　controllable,　and　semiconductor　industry　compatible　than　traditionally　transferred　graphene.