Tunable　photoluminescence　(PL)　has　wide　applications　in　optical　waveguides　and　communication.　Since　the　PL　intensity　is　strongly　dependent　on　the　crystal　field　symmetry,　curvature-dependent　strain-induced　PL　modulation　is　expected　in　flexible　antiferroelectric　(AFE)　thin　film　materials.　Here,　flexible　Er-doped　Pb0.98La0.02Zr0.95-Ti0.05O3　(PLZT)　AFE　thin　films　were　prepared　via　the　sol-gel　method.　A　giant　and　reversible　PL　intensity　modulation　(482%)　was　achieved　during　the　bending　process.　Based　on　density　functional　theory　(DFT)　calculations　and　Raman　spectra　measurements,　the　relationship　amongst　the　curvature-dependent　strains,　crystal　structure,　and　PL　modulation　was　discussed.　The　induced　strain　leads　to　lattice　distortion　and　even　a　phase　transition,　both　of　which　contribute　to　the　reduction　in　crystal　symmetry　and　thus　significantly　enhance　the　PL　intensity.