Curvature-dependent strain-induced photoluminescence modulations in flexible Er-doped Pb0.98La0.02Zr0.95Ti0.05O3 antiferroelectric thin films prepared by the sol-gel method - Details

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Abstract：

Tunable　photoluminescence　(PL)　has　wide　applications　in　optical　waveguides　and　communication.　Since　the　PL　intensity　is　strongly　dependent　on　the　crystal　field　symmetry,　curvature-dependent　strain-induced　PL　modulation　is　expected　in　flexible　antiferroelectric　(AFE)　thin　film　materials.　Here,　flexible　Er-doped　Pb0.98La0.02Zr0.95Ti0.05O3　(PLZT)　AFE　thin　ﬁlms　were　prepared　via　the　sol-gel　method.　A　giant　and　reversible　PL　intensity　modulation　(482%)　was　achieved　during　the　bending　process.　Based　on　density　functional　theory　(DFT)　calculations　and　Raman　spectra　measurements,　the　relationship　amongst　the　curvature-dependent　strains,　crystal　structure,　and　PL　modulation　was　discussed.　The　induced　strain　leads　to　lattice　distortion　and　even　a　phase　transition,　both　of　which　contribute　to　the　reduction　in　crystal　symmetry　and　thus　significantly　enhance　the　PL　intensity.　©　2023　Elsevier　Ltd

Keyword：

Antiferroelectric thin film Flexibility Phase transition Photoluminescence Strain

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[ 1 ] [Huang L.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
[ 2 ] [Xiong R.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
[ 3 ] [Xie J.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
[ 4 ] [Liu Q.]Department of Physics, Southern University of Science and Technology, Shenzhen, 518055, China
[ 5 ] [Zhang Y.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
[ 6 ] [Yang Q.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
[ 7 ] [Zhao C.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
[ 8 ] [Wu X.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
[ 9 ] [Lin T.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
[ 10 ] [Lin C.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
[ 11 ] [Gao M.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China
[ 12 ] [Sa B.]College of Materials Science and Engineering, Fuzhou University, Fuzhou, 350108, China

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Curvature-dependent strain-induced photoluminescence modulations in flexible Er-doped Pb0.98La0.02Zr0.95Ti0.05O3 antiferroelectric thin films prepared by the sol-gel method
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Source ：

Journal of the European Ceramic Society

ISSN： 0955-2219

Year： 2023

Issue： 16

Volume： 43

Page： 7455-7462

5 . 8

JCR@2023

5 . 8 0 0

JCR@2023

ESI HC Threshold：49

JCR Journal Grade：1

CAS Journal Grade：1

Cited Count：

WoS CC Cited Count： 0

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 2

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