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Abstract:
Tunable photoluminescence (PL) has wide applications in optical waveguides and communication. Since the PL intensity is strongly dependent on the crystal field symmetry, curvature-dependent strain-induced PL modulation is expected in flexible antiferroelectric (AFE) thin film materials. Here, flexible Er-doped Pb0.98La0.02Zr0.95Ti0.05O3 (PLZT) AFE thin films were prepared via the sol-gel method. A giant and reversible PL intensity modulation (482%) was achieved during the bending process. Based on density functional theory (DFT) calculations and Raman spectra measurements, the relationship amongst the curvature-dependent strains, crystal structure, and PL modulation was discussed. The induced strain leads to lattice distortion and even a phase transition, both of which contribute to the reduction in crystal symmetry and thus significantly enhance the PL intensity. © 2023 Elsevier Ltd
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Source :
Journal of the European Ceramic Society
ISSN: 0955-2219
Year: 2023
Issue: 16
Volume: 43
Page: 7455-7462
5 . 8
JCR@2023
5 . 8 0 0
JCR@2023
ESI HC Threshold:49
JCR Journal Grade:1
CAS Journal Grade:1
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