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author:

Lin, Nan (Lin, Nan.) [1] | Ye, Yun (Ye, Yun.) [2] (Scholars:叶芸) | Guo, Qian (Guo, Qian.) [3] | Yu, Jinhui (Yu, Jinhui.) [4] | Guo, Tailiang (Guo, Tailiang.) [5] (Scholars:郭太良)

Indexed by:

EI Scopus SCIE

Abstract:

For device printing, it is important for uniform films to be printed because the morphology of the film affects the performance of the device in inkjet printing. In this study, to prepare stable and well-dispersed ink, polyacrylate and silicone surfactant BD-3033H were added to ink. Then a uniform quantum dot (QD) film was obtained by optimizing the polyacrylate and silicone surfactant contents of the ink as well as the substrate temperature. The change of the polyacrylate structure from a curly chain structure to a three-dimensional network structure blocked the outward flow of QDs. Silicone surfactant BD-3033H caused Marangoni flow and made the QDs flow inward. When the substrate temperature was increased, the solvent evaporation rate was accelerated, the contact line was pinned, and the outward flow was enhanced, which changed the film structure from convex to flat. Finally, when the polyacrylate content was 12 wt%, the silicone surfactant BD-3033H content was 0.10 wt%, the substrate temperature was 40 degrees C, and the coffee ring effect was eliminated. A uniform QD film was printed, providing a technical guarantee for the fabrication of QD devices in the future.

Keyword:

coffee ring inkjet printing polyacrylate Quantum dot film silicone surfactant

Community:

  • [ 1 ] [Lin, Nan]Fuzhou Univ, Coll Phys & Telecommun Engn, Fuzhou, Peoples R China
  • [ 2 ] [Ye, Yun]Fuzhou Univ, Coll Phys & Telecommun Engn, Fuzhou, Peoples R China
  • [ 3 ] [Guo, Qian]Fuzhou Univ, Coll Phys & Telecommun Engn, Fuzhou, Peoples R China
  • [ 4 ] [Yu, Jinhui]Fuzhou Univ, Coll Phys & Telecommun Engn, Fuzhou, Peoples R China
  • [ 5 ] [Guo, Tailiang]Fuzhou Univ, Coll Phys & Telecommun Engn, Fuzhou, Peoples R China

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Source :

JOURNAL OF INFORMATION DISPLAY

ISSN: 1598-0316

Year: 2020

Issue: 2

Volume: 21

Page: 113-121

2 . 9 1 3

JCR@2020

3 . 7 0 0

JCR@2023

ESI Discipline: MATERIALS SCIENCE;

ESI HC Threshold:196

JCR Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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