High Performance Ge FinFET CMOS Invertor with ION=2.0 mA/ m at VOV=1V,S.S.=64 mV/dec,ION/IOFF=2.5 106, and Voltage Gain=90 V/V by Using High Pressure Supercritical Fluid Hydroxide Oxidation - Details

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A　high　performance　Ge　FinFET　CMOS　invertor　with　ION=2mA/　m　at　VOV　=1V,S.S.=64mV/dec,ION/IOFF=2.5　106　,　and　voltage　gain=90　V/V　is　achieved　by　a　high　pressure　supercritical　fluid　hydroxide　oxidation,　due　to　the　reduced　unstable　oxidation　states　and　oxygen　vacancy.　　©　2023　JSAP.

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[ 1 ] [Wu C.-Y.]National Tsing Hua University, Department of Engineering and System Science, Taiwan
[ 2 ] [Ruan D.-B.]College of Physics and Information Engineering, Fuzhou University, China
[ 3 ] [Chang-Liao K.-S.]National Tsing Hua University, Department of Engineering and System Science, Taiwan
[ 4 ] [Lee Y.-J.]Taiwan Semiconductor Research Institute, Taiwan
[ 5 ] [Chiu Y.-C.]Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Department of Photonics, Taiwan
[ 6 ] [Liu C.-W.]National Tsing Hua University, Department of Engineering and System Science, Taiwan
[ 7 ] [Liu G.-T.]National Tsing Hua University, Department of Engineering and System Science, Taiwan
[ 8 ] [Kuo B.-L.]National Tsing Hua University, Department of Engineering and System Science, Taiwan
[ 9 ] [Yang K.-C.]National Tsing Hua University, Department of Engineering and System Science, Taiwan
[ 10 ] [Li C.-H.]National Tsing Hua University, Department of Engineering and System Science, Taiwan
[ 11 ] [Liu P.-T.]Institute of Electro-Optical Engineering, National Yang Ming Chiao Tung University, Department of Photonics, Taiwan

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Year： 2023

Page： 23-24

Language： English

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ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 3

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物理与信息工程学院、微电子学院本学院/部未明确归属的数据

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