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author:

Chen, Qibin (Chen, Qibin.) [1] | Gong, Yihong (Gong, Yihong.) [2] | Tu, Ruiyong (Tu, Ruiyong.) [3] | Xie, Jin (Xie, Jin.) [4] | Dai, Haiyan (Dai, Haiyan.) [5] | Chen, Yinrong (Chen, Yinrong.) [6] | Wei, Rongshan (Wei, Rongshan.) [7] (Scholars:魏榕山) | Li, Jinghu (Li, Jinghu.) [8] | Luo, Zhicong (Luo, Zhicong.) [9]

Indexed by:

EI Scopus SCIE

Abstract:

This article introduces a high-precision and low temperature coefficient(TC) bandgap reference (BGR) with a 1.2 V output voltage after a novel digital trimming. A multi-section curvature compensation circuit alleviates the variation caused by the temperature dependence of the base emitter nonlinear voltage of bipolar transistors. The novel digital trimming technology is utilized to reduce the TC and improve the output voltage precision(VP) of the proposed the BGR. Designed and simulated in a 65 nm CMOS process with an active area of 0.037 mm2. Simulation results of the proposed the BGR demonstrates that its output voltage is 1.2 V, the best TC is 0.959 ppm/degrees C over a -40 degrees C to 125 degrees C temperature range and the power consumption of 138 mu W under 3.3 V supply voltage at room temperature with trimming. In the supply voltage range of 1.8-3.4 V, the line regulation (LR) is 0.25%/V.

Keyword:

Bandgap voltage reference Digital trimming Multi-section curvature compensation

Community:

  • [ 1 ] [Chen, Qibin]Fujian Agr & Forestry Univ, Coll Mech & Elect Engn, Fuzhou 350002, Peoples R China
  • [ 2 ] [Gong, Yihong]Fujian Agr & Forestry Univ, Coll Mech & Elect Engn, Fuzhou 350002, Peoples R China
  • [ 3 ] [Tu, Ruiyong]Fujian Agr & Forestry Univ, Coll Mech & Elect Engn, Fuzhou 350002, Peoples R China
  • [ 4 ] [Xie, Jin]Fujian Agr & Forestry Univ, Coll Mech & Elect Engn, Fuzhou 350002, Peoples R China
  • [ 5 ] [Dai, Haiyan]Fujian Agr & Forestry Univ, Coll Mech & Elect Engn, Fuzhou 350002, Peoples R China
  • [ 6 ] [Luo, Zhicong]Fujian Agr & Forestry Univ, Coll Mech & Elect Engn, Fuzhou 350002, Peoples R China
  • [ 7 ] [Li, Jinghu]Fujian Agr & Forestry Univ, Coll Comp & Informat Sci, Fuzhou 350002, Peoples R China
  • [ 8 ] [Li, Jinghu]Xiamen Eochip Semicond Co Ltd, Xiamen 361009, Peoples R China
  • [ 9 ] [Luo, Zhicong]Fujian Key Lab Agr Informat Sensoring Technol, Fuzhou 350002, Peoples R China
  • [ 10 ] [Wei, Rongshan]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350108, Peoples R China
  • [ 11 ] [Chen, Yinrong]Xiamen Univ, Sch Elect & Sci & Engn, Xiamen 361005, Peoples R China

Reprint 's Address:

  • [Luo, Zhicong]Fujian Agr & Forestry Univ, Coll Mech & Elect Engn, Fuzhou 350002, Peoples R China;;[Li, Jinghu]Fujian Agr & Forestry Univ, Coll Comp & Informat Sci, Fuzhou 350002, Peoples R China;;[Li, Jinghu]Xiamen Eochip Semicond Co Ltd, Xiamen 361009, Peoples R China

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Source :

MICROELECTRONICS JOURNAL

ISSN: 0026-2692

Year: 2023

Volume: 136

1 . 9

JCR@2023

1 . 9 0 0

JCR@2023

ESI Discipline: ENGINEERING;

ESI HC Threshold:35

JCR Journal Grade:3

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 4

SCOPUS Cited Count: 12

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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