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author:

Chen, Q. (Chen, Q..) [1] | Gong, Y. (Gong, Y..) [2] | Tu, R. (Tu, R..) [3] | Xie, J. (Xie, J..) [4] | Dai, H. (Dai, H..) [5] | Chen, Y. (Chen, Y..) [6] | Wei, R. (Wei, R..) [7] | Li, J. (Li, J..) [8] | Luo, Z. (Luo, Z..) [9]

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Scopus

Abstract:

This article introduces a high-precision and low temperature coefficient(TC) bandgap reference (BGR) with a 1.2 V output voltage after a novel digital trimming. A multi-section curvature compensation circuit alleviates the variation caused by the temperature dependence of the base emitter nonlinear voltage of bipolar transistors. The novel digital trimming technology is utilized to reduce the TC and improve the output voltage precision(VP) of the proposed the BGR. Designed and simulated in a 65 nm CMOS process with an active area of 0.037 mm2. Simulation results of the proposed the BGR demonstrates that its output voltage is 1.2 V, the best TC is 0.959 ppm/°C over a −40 °C to 125 °C temperature range and the power consumption of 138 μW under 3.3 V supply voltage at room temperature with trimming. In the supply voltage range of 1.8–3.4 V, the line regulation (LR) is 0.25%/V. © 2023 Elsevier Ltd

Keyword:

Bandgap voltage reference Digital trimming Multi-section curvature compensation

Community:

  • [ 1 ] [Chen Q.]The College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou, 350002, China
  • [ 2 ] [Gong Y.]The College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou, 350002, China
  • [ 3 ] [Tu R.]The College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou, 350002, China
  • [ 4 ] [Xie J.]The College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou, 350002, China
  • [ 5 ] [Dai H.]The College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou, 350002, China
  • [ 6 ] [Chen Y.]School of Electronic and Science and Engineering, Xiamen University, Xiamen, 361005, China
  • [ 7 ] [Wei R.]The College of Physics and Information Engineering, Fuzhou University, Fuzhou, 350108, China
  • [ 8 ] [Li J.]The College of Computer and Information Sciences, Fujian Agriculture and Forestry University, Fuzhou, 350002, China
  • [ 9 ] [Li J.]Xiamen Eochip Semiconductor Co., Ltd., Xiamen, 361009, China
  • [ 10 ] [Luo Z.]The College of Mechanical and Electronic Engineering, Fujian Agriculture and Forestry University, Fuzhou, 350002, China
  • [ 11 ] [Luo Z.]Fujian Key Laboratory of Agricultural Information Sensoring Technology, Fuzhou, 350002, China

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Source :

Microelectronics Journal

ISSN: 0026-2692

Year: 2023

Volume: 136

1 . 9

JCR@2023

1 . 9 0 0

JCR@2023

ESI HC Threshold:35

JCR Journal Grade:3

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 12

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 1

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