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author:

Qiu, X. (Qiu, X..) [1] | Liu, Y. (Liu, Y..) [2] | Xia, J. (Xia, J..) [3] | Guo, J. (Guo, J..) [4] | Chen, P.-A. (Chen, P.-A..) [5] | Wei, H. (Wei, H..) [6] | Shi, X. (Shi, X..) [7] | Chen, C. (Chen, C..) [8] | Zeng, Z. (Zeng, Z..) [9] | Chen, H. (Chen, H..) [10] | Jiang, L. (Jiang, L..) [11] | Liao, L. (Liao, L..) [12] | Hu, Y. (Hu, Y..) [13]

Indexed by:

Scopus

Abstract:

2D lead halide perovskites (LHPs) are highly attractive for fabrication of thin-film transistors (TFTs) due to their promising charge transport properties, mitigated ion migration effect, and high stability. However, thus far there have been no reports of 2D LHP TFTs that can operate well at room temperature. Herein, we report a simple device fabrication strategy for 2D LHP TFTs. 2D LHP TFTs are successfully obtained via a low-temperature solution process, and they show mobility approaching 10−2 cm2 V−1 s−1 and an on/off ratio of about 104 with negligible hysteresis at room temperature. Moreover, the devices feature high bias-stress stability and storage stability. Additionally, large-area TFT arrays show a high degree of uniformity in device performance and exhibit capability for photodetection imaging. This study provides solutions to address the challenges in device fabrication of 2D LHP TFTs and demonstrate their potential for practical applications. © 2022 The Author(s)

Keyword:

film orientation room-temperature operation SnO2 interlayer stability thin-film transistors two-dimensional perovskites

Community:

  • [ 1 ] [Qiu, X.]Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
  • [ 2 ] [Qiu, X.]Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
  • [ 3 ] [Qiu, X.]International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
  • [ 4 ] [Liu, Y.]Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
  • [ 5 ] [Xia, J.]Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
  • [ 6 ] [Guo, J.]Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
  • [ 7 ] [Guo, J.]State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
  • [ 8 ] [Chen, P.-A.]Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
  • [ 9 ] [Wei, H.]Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
  • [ 10 ] [Shi, X.]Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 11 ] [Chen, C.]Science and Technology on Advanced Ceramic Fibers and Composites Laboratory, College of Aerospace Science and Engineering, National University of Defense Technology, Changsha, 410000, China
  • [ 12 ] [Zeng, Z.]State Key Laboratory of Chemo/Biosensing and Chemometrics, College of Chemistry and Chemical Engineering, Hunan University, Changsha, 410082, China
  • [ 13 ] [Chen, H.]Institute of Optoelectronic Display, National and Local United Engineering Lab of Flat Panel Display Technology, Fuzhou University, Fuzhou, 350002, China
  • [ 14 ] [Jiang, L.]Beijing National Laboratory for Molecular Sciences, Key Laboratory of Organic Solids, Institute of Chemistry, Chinese Academy of Sciences, Beijing, 100190, China
  • [ 15 ] [Liao, L.]International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China
  • [ 16 ] [Hu, Y.]Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, School of Physics and Electronics, Hunan University, Changsha, 410082, China
  • [ 17 ] [Hu, Y.]Shenzhen Research Institute of Hunan University, Shenzhen, 518063, China
  • [ 18 ] [Hu, Y.]International Science and Technology Innovation Cooperation Base for Advanced Display Technologies of Hunan Province, College of Semiconductors (College of Integrated Circuits), Hunan University, Changsha, 410082, China

Reprint 's Address:

  • [Hu, Y.]Key Laboratory for Micro/Nano Optoelectronic Devices of Ministry of Education, China

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Source :

Cell Reports Physical Science

ISSN: 2666-3864

Year: 2023

Issue: 1

Volume: 4

7 . 9

JCR@2023

7 . 9 0 0

JCR@2023

ESI HC Threshold:49

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 0

SCOPUS Cited Count: 6

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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