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author:

Du, Zaifa (Du, Zaifa.) [1] | Wang, Kun (Wang, Kun.) [2] | Sun, Jie (Sun, Jie.) [3] (Scholars:孙捷) | Guo, Weiling (Guo, Weiling.) [4] | Wu, Chaoxing (Wu, Chaoxing.) [5] (Scholars:吴朝兴) | Lin, Chang (Lin, Chang.) [6] | Yan, Qun (Yan, Qun.) [7]

Indexed by:

EI Scopus SCIE

Abstract:

Realizing full color GaN-based micro-and nano-light-emitting diode (nLED) displays with quantum dots (QDs) being the color conversion media remains challenging because of the limited QD color conversion efficiency (CCE). In this article, by using GaN-based nanorod LED as the light source and exciting the QDs by non-radiative energy transfer (NRET) method, a nanorod LED with ultrahigh CCE has been realized. At the same time, a single electrical contact alternating current (ac)-driven electroluminescence (EL) method is adopted to investigate the relationship between frequency and nLED performance. Different from the double terminal injection mode, on the premise of lighting up the nanorod LED, the ac-driven can also avoid the necessity of external p-type and n-type electrodes, thus simplified the manufacturing process of LED. The final optical measurement shows that the CCE of this hybrid color conversion nLED driven by single contact electrode can reach up to 86.67% under the ac voltage of 60 V and an ac frequency of 14.2 MHz, which shows that the energy utilization efficiency can be effectively improved by NRET.

Keyword:

Color conversion efficiency (CCE) nanorod light-emitting diode (LED) nonradiative energy transfer (NRET) single electrical contact

Community:

  • [ 1 ] [Du, Zaifa]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 2 ] [Guo, Weiling]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China
  • [ 3 ] [Wang, Kun]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 4 ] [Sun, Jie]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 5 ] [Wu, Chaoxing]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 6 ] [Lin, Chang]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 7 ] [Yan, Qun]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China
  • [ 8 ] [Wang, Kun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350100, Peoples R China
  • [ 9 ] [Sun, Jie]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350100, Peoples R China
  • [ 10 ] [Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350100, Peoples R China
  • [ 11 ] [Lin, Chang]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350100, Peoples R China
  • [ 12 ] [Yan, Qun]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350100, Peoples R China

Reprint 's Address:

  • [Guo, Weiling]Beijing Univ Technol, Key Lab Optoelect Technol, Beijing 100124, Peoples R China;;[Sun, Jie]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China;;[Wu, Chaoxing]Fujian Sci & Technol Innovat Lab Optoelect Informa, Fuzhou 350100, Peoples R China;;[Sun, Jie]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350100, Peoples R China;;[Wu, Chaoxing]Fuzhou Univ, Coll Phys & Informat Engn, Fuzhou 350100, Peoples R China;;

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Source :

IEEE TRANSACTIONS ON ELECTRON DEVICES

ISSN: 0018-9383

Year: 2023

Issue: 3

Volume: 70

Page: 1156-1161

2 . 9

JCR@2023

2 . 9 0 0

JCR@2023

ESI Discipline: ENGINEERING;

ESI HC Threshold:35

JCR Journal Grade:2

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count: 3

SCOPUS Cited Count: 5

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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