In　this　paper，　non-electrical　contact（NEC）　GaN-based　Micro-LED　devices　were　prepared　by　metal　organic　chemical　vapor　deposition（MOCVD）　and　atomic　layer　deposition（ALD）　because　a　series　of　problems　would　emerge，　including　mass　transfer，　bonding，　and　high-quality　contact　between　chips　and　driving　electrodes　as　the　LED　chip　size　is　further　decreased.　We　investigated　the　photoelectric　characteristics　of　NEC　Micro-LED　devices，　such　as　the　current-voltage（I-V），　luminance-frequency（L-F），　luminescence　delay　and　impedance-frequency（I-F）　characteristics，　and　the　working　mechanism　of　the　device　is　also　analyzed.　These　experimental　results　indicate　that　the　current　of　the　NEC　Micro-LED　device　increases　with　the　increase　of　the　frequency　and　I-V　curves　have　linear　relationships　under　the　role　of　the　alternating-current　drive.　At　the　driving　signal　of　20Vpp，　the　luminances　of　the　NEC　Micro-LED　device　first　increase　and　then　fall　with　the　gradual　increases　of　the　frequencies.　When　the　frequency　is　25　MHz，　the　luminance　of　NEC　Micro-LED　device　reaches　to　be　the　maximum.　Moreover，　the　luminescence　peak　lags　behind　the　current　peak，　indicating　that　the　luminescence　of　the　device　is　delayed.　Besides，　the　equivalent　impedance　of　the　NEC　Micro-LED　device　decreases　and　finally　tends　to　be　stable　with　the　increases　of　the　frequencies　and　the　device　shows　the　negative　capacitance　phenomenon　around　the　frequency　of　53　MHz.　©　2022　Chines　Academy　of　Sciences.　All　rights　reserved.