Photo-induced inverse spin Hall effect of the top and bottom Dirac surface states of three-dimensional topological insulators Sb2Te3 - Details

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Inverse　spin　Hall　effect　(ISHE)　provides　an　important　way　to　manipulate　and　detect　spin　current　via　spin–orbit　coupling.　However,　it　is　difficult　to　distinguish　the　ISHE　of　the　top　and　bottom　surface　states　of　topological　insulators　(TIs).　Photo-induced　inverse　spin　Hall　effect　(PISHE)　is　a　powerful　tool　to　investigate　the　ISHE　of　the　Dirac　surface　states　of　TIs.　In　this　work,　PISHE　of　three-dimensional　topological　insulators　Sb2Te3　with　a　thickness　of　7　and　30　quintuple　layer　(QL)　has　been　investigated.　It　is　revealed　that　both　of　the　PISHE　currents　of　the　top　and　bottom　surface　states　are　observed　in　the　7-QL　and　the　30-QL　samples.　Besides,　a　model　has　been　developed　to　separate　the　PISHE　current　of　the　top　and　bottom　surface　states.　It　is　found　that　the　PISHE　currents　of　the　top　and　bottom　surface　states　of　the　Sb2Te3　films　almost　do　not　change　with　temperature　in　the　range　of　77　to　300　K.　It　is　demonstrated　that　the　PISHE　current　changes　linearly　with　light　power,　which　agrees　well　with　the　theoretical　model.　This　study　provides　a　method　utilizing　circularly　polarized　light　to　manipulate　and　detect　the　ISHE　of　the　top　and　bottom　surface　states　of　three-dimensional　topological　insulators.　©　2022　Elsevier　B.V.

Keyword：

Antimony compounds Crystal symmetry Electric insulators Inverse problems Spin Hall effect Surface states Tellurium compounds Topological insulators Topology

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[ 1 ] [Chen, Shenzhong]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 2 ] [Yu, Jinling]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 3 ] [Zhu, Kejing]Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing; 100084, China
[ 4 ] [Liu, Qibin]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 5 ] [Zeng, Xiaolin]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
[ 6 ] [Chen, Yonghai]Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing; 100083, China
[ 7 ] [Chen, Yonghai]College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing; 100049, China
[ 8 ] [Yin, Chunming]School of Physics, University of New South Wales, Sydney; NSW; 2052, Australia
[ 9 ] [Yin, Chunming]CAS Key Laboratory of Microscale Magnetic Resonance, Department of Modern Physics, Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei; 230026, China
[ 10 ] [Cheng, Shuying]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 11 ] [Cheng, Shuying]Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering, Changzhou University, Changzhou; Jiangsu; 213164, China
[ 12 ] [Lai, Yunfeng]Institute of Micro/Nano Devices and Solar Cells, School of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
[ 13 ] [He, Ke]Department of Physics, State Key Laboratory of Low Dimensional Quantum Physics, Tsinghua University, Beijing; 100084, China

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Source ：

Physica E: Low-Dimensional Systems and Nanostructures

ISSN： 1386-9477

Year： 2022

Volume： 143

3 . 3

JCR@2022

2 . 9 0 0

JCR@2023

ESI HC Threshold：55

JCR Journal Grade：2

CAS Journal Grade：3

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WoS CC Cited Count：

SCOPUS Cited Count： 1

ESI Highly Cited Papers on the List： 0 Unfold All

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30 Days PV： 0

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