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author:

Yu, Jinling (Yu, Jinling.) [1] (Scholars:俞金玲) | Zhu, Kejing (Zhu, Kejing.) [2] | Zeng, Xiaolin (Zeng, Xiaolin.) [3] | Chen, Lei (Chen, Lei.) [4] | Chen, Yonghai (Chen, Yonghai.) [5] | Liu, Yu (Liu, Yu.) [6] | Yin, Chunming (Yin, Chunming.) [7] | Cheng, Shuying (Cheng, Shuying.) [8] (Scholars:程树英) | Lai, Yunfeng (Lai, Yunfeng.) [9] (Scholars:赖云锋) | Huang, Jin (Huang, Jin.) [10] | He, Ke (He, Ke.) [11] | Xue, Qikun (Xue, Qikun.) [12]

Indexed by:

EI Scopus SCIE

Abstract:

Helicity-dependent photocurrent (HDPC) has been observed in epitaxial thin films of the three-dimensional topological insulator Sb2Te3 with a thickness of 7, 20, and 30 quintuple layers (QLs). By analyzing the incident angle dependence of the HDPC, we successfully extract the photocurrent induced by the circular photon drag effect (CPDE) of even parity from the HDPC. It is found that the circular photogalvanic effect (CPGE) is larger than the odd parity of CPDE. The CPGEs of the top and bottom surface states are successfully distinguished at room temperature. As the thickness of the Sb2Te3 film is increased from 7 to 20 QLs, the dominant contribution of the CPGE current switches from the top surface states to the bottom surface states under the front illumination of a 1064-nm laser. Additionally, it is found that the CPGE currents of the 20- and 30-QL samples reverse sign when the temperature is increased from 77 to 300 K, which may be attributed to the HDPC current induced by the combined action of the inverse spin Hall effect and the vertical thermoelectric effect overwhelming the CPGE current at low temperature in the samples. The insights we obtained are significant for engineering optospintronic devices based on three-dimensional topological insulators with a strong thermoelectric effect.

Keyword:

Community:

  • [ 1 ] [Yu, Jinling]Fuzhou Univ, Sch Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou, Fujian, Peoples R China
  • [ 2 ] [Zeng, Xiaolin]Fuzhou Univ, Sch Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou, Fujian, Peoples R China
  • [ 3 ] [Chen, Lei]Fuzhou Univ, Sch Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou, Fujian, Peoples R China
  • [ 4 ] [Cheng, Shuying]Fuzhou Univ, Sch Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou, Fujian, Peoples R China
  • [ 5 ] [Lai, Yunfeng]Fuzhou Univ, Sch Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou, Fujian, Peoples R China
  • [ 6 ] [Zhu, Kejing]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
  • [ 7 ] [He, Ke]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
  • [ 8 ] [Xue, Qikun]Tsinghua Univ, Dept Phys, State Key Lab Low Dimens Quantum Phys, Beijing 100084, Peoples R China
  • [ 9 ] [Chen, Yonghai]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 10 ] [Liu, Yu]Chinese Acad Sci, Inst Semicond, Key Lab Semicond Mat Sci, Beijing 100083, Peoples R China
  • [ 11 ] [Chen, Yonghai]Univ Chinese Acad Sci, Coll Mat Sci & Opto Elect Technol, Beijing 100049, Peoples R China
  • [ 12 ] [Liu, Yu]Univ Chinese Acad Sci, Coll Mat Sci & Opto Elect Technol, Beijing 100049, Peoples R China
  • [ 13 ] [Yin, Chunming]Univ New South Wales, Sch Phys, Sydney, NSW 2052, Australia
  • [ 14 ] [Yin, Chunming]Univ Sci & Technol China, Synerget Innovat Ctr Quantum Informat & Quantum P, Dept Modern Phys, CAS Key Lab Microscale Magnet Resonance, Hefei 230026, Anhui, Peoples R China
  • [ 15 ] [Cheng, Shuying]Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolat Sci & E, Changzhou 213164, Jiangsu, Peoples R China
  • [ 16 ] [Lai, Yunfeng]Changzhou Univ, Jiangsu Collaborat Innovat Ctr Photovolat Sci & E, Changzhou 213164, Jiangsu, Peoples R China
  • [ 17 ] [Huang, Jin]Chinese Acad Sci, Fujian Inst Res Struct Matter, Fuzhou 350002, Fujian, Peoples R China

Reprint 's Address:

  • 俞金玲

    [Yu, Jinling]Fuzhou Univ, Sch Phys & Informat Engn, Inst Micronano Devices & Solar Cells, Fuzhou, Fujian, Peoples R China

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Source :

PHYSICAL REVIEW B

ISSN: 2469-9950

Year: 2019

Issue: 23

Volume: 100

3 . 5 7 5

JCR@2019

3 . 2 0 0

JCR@2023

ESI Discipline: PHYSICS;

ESI HC Threshold:138

JCR Journal Grade:2

CAS Journal Grade:3

Cited Count:

WoS CC Cited Count: 26

SCOPUS Cited Count: 22

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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