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author:

Wang, Kun (Wang, Kun.) [1] | Chen, Peiqi (Chen, Peiqi.) [2] | Chen, Jingjing (Chen, Jingjing.) [3] | Liu, Ye (Liu, Ye.) [4] | Wu, Chaoxing (Wu, Chaoxing.) [5] | Sun, Jie (Sun, Jie.) [6] | Zhou, Xiongtu (Zhou, Xiongtu.) [7] | Zhang, Yongai (Zhang, Yongai.) [8] | Guo, Tailiang (Guo, Tailiang.) [9]

Indexed by:

EI

Abstract:

Alternating current (AC)-driven electroluminescent (EL) devices have attracted widespread attention due to their special advantages. Under the trend of nanoscale miniaturization in optoelectronics, AC-driven EL devices with nanoscale are highly desirable to be applied to nano-optoelectronic integrated circuits. In this work, GaN-based nanorod LEDs (nLED) are used as nanoscale emitters to fabricate AC-driven nano-EL device, namely, AC-nLED. Two configurations including single-dielectric AC-nLED and double-dielectric AC-nLED without carrier injection are demonstrated. The electrical and optical characteristics of single-dielectric AC-nLED and double-dielectric AC-nLED are demonstrated, which have completely different frequency responses. The working mechanisms and origin of the difference in frequency response are discussed. Our work presents an alternative device configuration for obtaining AC-driven nano-EL devices, which are expected to be used in nano-photonic systems and nano-pixel light-emitting displays. © 2021 Elsevier Ltd

Keyword:

Display devices Electric impedance measurement Electroluminescence Frequency response Gallium nitride III-V semiconductors Light Light emitting diodes Nanorods

Community:

  • [ 1 ] [Wang, Kun]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Chen, Peiqi]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 3 ] [Chen, Jingjing]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 4 ] [Liu, Ye]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 5 ] [Wu, Chaoxing]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 6 ] [Wu, Chaoxing]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 7 ] [Sun, Jie]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 8 ] [Sun, Jie]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 9 ] [Zhou, Xiongtu]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 10 ] [Zhou, Xiongtu]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 11 ] [Zhang, Yongai]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 12 ] [Zhang, Yongai]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China
  • [ 13 ] [Guo, Tailiang]College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350108, China
  • [ 14 ] [Guo, Tailiang]Fujian Science & Technology Innovation Laboratory for Optoelectronic Information of China, Fuzhou; 350108, China

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Source :

Optics and Laser Technology

ISSN: 0030-3992

Year: 2021

Volume: 140

4 . 9 3 9

JCR@2021

4 . 6 0 0

JCR@2023

ESI HC Threshold:105

JCR Journal Grade:1

CAS Journal Grade:2

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 32

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 0

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