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[会议论文]

Direct growth of transparent graphene electrodes on GaN LEDs using metal proximity catalytic effect

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author:

Xiong, Fangzhu (Xiong, Fangzhu.) [1] | Guo, Weiling (Guo, Weiling.) [2] | Wang, Le (Wang, Le.) [3] | Unfold

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EI

Abstract:

High-quality graphene was obtained directly on GaN epiwafers at low temperature using the metal proximity catalytic effect. Metal catalyse graphene without contacting with it ensure high performance of graphene-GaN LED. © OSA 2021, © 2021 The Author(s)

Keyword:

Gallium nitride Graphene Graphite electrodes III-V semiconductors Light emitting diodes Temperature Transparent electrodes

Community:

  • [ 1 ] [Xiong, Fangzhu]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
  • [ 2 ] [Guo, Weiling]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
  • [ 3 ] [Wang, Le]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
  • [ 4 ] [Du, Zaifa]Key Laboratory of Optoelectronics Technology, College of Microelectronics, Beijing University of Technology, Beijing; 100124, China
  • [ 5 ] [Sun, Jie]National and Local United Engineering Laboratory of Flat Panel Display Technology, College of Physics and Information Engineering, Fuzhou University, Fuzhou; 350116, China

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Year: 2021

Language: English

Cited Count:

WoS CC Cited Count: 0

30 Days PV: 2

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