A　new　phosphidation　route　based　on　a　solvothermal　method　is　demonstrated　for　the　deposition　of　Ni2P　on　CdS　nanorods　photocatalyst　with　NaBH4　as　a　crucial　reactant　and　(H2PO2)as　dissolvable　P　precursor,　which　leads　to　a　highly　crystallized　and　well　contacted　Ni2P　on　CdS　in　an　Ohmic-contact　model.　On　the　optimized　sample　(2%　Ni2P/CdS),　as　high　as　1.18　mmol.h(-1)　H-2　evolution　rate　can　be　obtained　over　50　mg　sample,　corresponding　to　an　apparent　quantum　efficiency　of　56%　(under　lambda　=　435　nm　irradiation).　The　activity　is　significantly　higher　than　the　samples　prepared　by　conventional　phosphidation　processes　and　the　classical　Pt　(2%)　modified　CdS.　The　remarkable　HER　performance　can　be　ascribed　to　the　loading　of　intimately　contacted　Ni2P,　which　can　promote　the　separation　of　photoinduced　charge　carriers　and　simultaneously　decreases　the　overpotential　for　H-2　evolution.　Furthermore,　a　reservoir　role　for　photoinduced　ewas　observed　on　the　deposited　Ni2P　beyond　as　a　cocatalyst.