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author:

林伟 (林伟.) [1] | 黄世震 (黄世震.) [2] | 赖云锋 (赖云锋.) [3]

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Abstract:

通过反应溅射,以硅基片(表面上有白金加热电极)为基底制作H2S薄膜气敏元件.实验表明,纳米SnO2对H2S具有较高的敏感度,对干扰气体的选择性较好.性能测试表明,元件的特性与敏感材料的厚度、溅射气压等工艺参数有关系,但敏感材料的厚度对元件的特性起着决定性的作用,气敏薄膜有一个最佳厚度范围.通过X射线衍射仪进行材料的微观分析,表明SnO2的平均粒径大小为8.5 nm.

Keyword:

H2S气敏元件 溅射气压 灵敏度 磁控溅射 薄膜 薄膜厚度 选择性

Community:

  • [ 1 ] 福州大学气敏传感器研究所,福建,福州,350002

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Source :

福州大学学报:自然科学版

ISSN: 1000-2243

CN: 35-1337/N

Year: 2003

Issue: 4

Volume: 31

Page: 425-429

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count: -1

30 Days PV: 0

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