Abstract:
在研制压阻式扩散硅压力传感器中,除了采用常规的平面工艺以外,还需要几项特殊的、重要的新技术、新工艺,简要地论述真空静电封接技术、异向蚀刻技术以及减少层错的三氯乙烯氧化工艺等.
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Source :
传感器技术
Year: 1995
Issue: 01
Page: 52-54
Cited Count:
SCOPUS Cited Count:
ESI Highly Cited Papers on the List: 0 Unfold All
WanFang Cited Count:
Chinese Cited Count:
30 Days PV: 1
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