Structures and dielectric properties of La/Sn co-substituted Ba4Nd2Ti4Ta6O30 ceramics - Details

author：

Zheng, X.H. (Zheng, X.H..) ^[1] | Chen, X.M. (Chen, X.M..) ^[2] | Wang, T. (Wang, T..) ^[3]

Indexed by：

Abstract：

The　effects　of　La/Sn　co-substitution　at　A　and　B　sites　of　Ba4　Nd2Ti4Ta6O30　ceramics　were　investigated.　With　La/Sn　co-substitution,　the　temperature　coefficient　was　significantly　improved　to　near　zero,　at　the　same　time,　dielectric　constant　reduced　and　dielectric　loss　increased.　In　particular,　remarkable　annealing　effects　on　dielectric　properties　were　observed　for　these　modified　ceramics.　After　annealing,　dielectric　constant　considerably　increased,　and　temperature　coefficient　shifted　to　more　negative.　©　2005　Springer　Science　+　Business　Media,　Inc.

Keyword：

Annealing Barium compounds Ceramic materials Composition effects Crystal structure Dielectric losses Lanthanum Permittivity Substitution reactions Thermal effects Tin

Community：

[ 1 ] [Zheng, X.H.]College of Materials Science and Engineering, Fuzhou University, Fuzhou 350002, China
[ 2 ] [Zheng, X.H.]Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
[ 3 ] [Chen, X.M.]Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China
[ 4 ] [Wang, T.]Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China

Reprint 's Address：

[zheng, x.h.]college of materials science and engineering, fuzhou university, fuzhou 350002, china;;[zheng, x.h.]department of materials science and engineering, zhejiang university, hangzhou 310027, china

Email：

Show more details

Related Keywords：

Hardening of an Al0.3CoCrFeNi high entropy alloy via high-pressure torsion and thermal annealing
2015，MATERIALS LETTERS
Research on capacitive properties of Ti/Ir0.4Sn0.6O2 electrode material
2012，Transactions of Materials and Heat Treatment
Mechanism of giant dielectric response of CaCu3Ti4O12 ceramics
2011，Chinese Journal of Nonferrous Metals
Preparation Methodologies and Nano/Microstructural Evaluation of Metal/Semiconductor Thin Films
2012，JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY
Solution-Processed InGaZnO-Based Artificial Neuron for Neuromorphic System
2023，IEEE TRANSACTIONS ON ELECTRON DEVICES

Source ：

Journal of Materials Science: Materials in Electronics

ISSN： 0957-4522

Year： 2005

Issue： 9

Volume： 16

Page： 623-627

0 . 7 8 1

JCR@2005

2 . 8 0 0

JCR@2023

JCR Journal Grade：2

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count： 5

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 1

Affiliated Colleges：

Get Fulltext

DOI Library Discovery Baidu Scholar Search Engineering Village

Type
Departments

All Years Choose Year From to