Metal/semiconductor　thin　films　are　a　class　of　unique　materials　that　are　widespread　technological　applications,　particularly　in　the　field　of　microelectronic　devices.　Assessment　strategies　of　fractal　and　nano/microscale　evolution　for　metal/semiconductor　thin　films　formed　at　various　annealing　temperatures　are　of　fundamental　importance　in　the　development　of　nano/microdevices.　This　review　presents　the　preparation　methodologies　and　nano/microstructural　evaluation　of　metal/semiconductor　thin　films　including　Au/Ge　bilayer　films　and　Pd-Ge　alloy　thin　films,　which　show　in　the　form　of　fractals　and　nanocrystals.　Firstly,　the　extended　version　of　Au/Ge　thin　films　for　the　fractal　crystallization　of　amorphous　Ge　and　the　formation　of　nanocrystals　developed　with　improved　micro-　and　nanostructured　features　are　described　in　Section　2.　Secondly,　the　nano/microstructural　characteristics　of　Pd/Ge　alloy　thin　films　during　annealing　have　been　investigated　in　detail　and　described　in　Section　3.　Finally,　we　will　draw　the　conclusions　from　the　Present　work　as　shown　in　Section　4.　It　is　expected　that　the　preparation　methodologies　developed　and　the　knowledge　of　nano/microstructural　evolution　gained　in　metal/semiconductor　thin　films,　including　Au/Ge　bilayer　films　and　Pd-Ge　alloy　thin　films,　will　provide　an　important　fundamental　basis　underpinning　further　interdisciplinary　research　in　these　fields　such　as　physics,　chemistry,　materials　science,　and　nanoscience　and　nanotechnology,　leading　to　promising　exciting　opportunities　for　future　technological　applications　involving　these　thin　films.