Characterization of SnS films prepared by thermal evaporation - Details

author：

Cheng, Shuying (Cheng, Shuying.) ^[1] (Scholars：程树英) | Zhong, Nanbao (Zhong, Nanbao.) ^[2] | Huang, Cichang (Huang, Cichang.) ^[3] | Chen, Guonan (Chen, Guonan.) ^[4] (Scholars：陈国南)

Indexed by：

EI Scopus PKU CSCD

Abstract：

p-type　SnS　films　were　grown　on　ITO-film-coated　glass　substrates　by　thermal　evaporation.　Its　microstructures,　composition　and　properties　were　characterized　with　X-ray　diffraction　(XRD),　scanning　electron　microscopy　(SEM)　and　optical　measurement.　The　results　show　that　the　polycrystalline　SnS　film　has　an　orthorhombic　structure　with　the　grain　sizes　ranging　from　60　to　100　nm.　The　fairly　uniform　film　strongly　adheres　to　the　ITO　surface　and　its　resistivity　is　of　the　order　of　10-2　Ω·cm.　Its　direct　band　gap　is　estimated　to　be　1.34　eV　with　an　absorption　coefficient　near　the　fundamental　absorption　edge　larger　than　2　×　104　cm-1.　We　suggest　that　the　SnS　film　grown　by　thermal　evaporation　be　good　absorption　material　for　solar　cell　fabrication.

Keyword：

Characterization Electric properties Energy gap Evaporation Film growth Grain size and shape Light absorption Microstructure Optical properties Polycrystalline materials Scanning electron microscopy Solar cells Substrates Tin compounds X ray diffraction analysis

Community：

[ 1 ] [Cheng, Shuying]Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002, China
[ 2 ] [Cheng, Shuying]Chemistry Department, Fuzhou University, Fuzhou 350002, China
[ 3 ] [Zhong, Nanbao]Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002, China
[ 4 ] [Huang, Cichang]Department of Electronic Science and Applied Physics, Fuzhou University, Fuzhou 350002, China
[ 5 ] [Chen, Guonan]Chemistry Department, Fuzhou University, Fuzhou 350002, China