A　chemical　vapor　deposition　model　coupling　the　silane　thermal　deposition　reactions　with　the　transfer　of　momentum,　energy　and　mass　in　the　silane-hydrogen　system　was　developed.　The　numerical　solution　shows　good　agreement　with　literature　data.　Then　the　influence　of　inlet-gas　composition,　the　reaction　temperature,　the　reaction　pressure　and　the　inlet-gas　velocity　on　the　growth　rate　and　energy　consumption　were　analyzed.　The　results　indicate　that　silicon　growth　rate　increases　while　the　energy　consumption　decreases　when　the　molar　fraction　of　silane　in　the　inlet-gas,　the　reaction　temperature　and　pressure　become　larger.　The　silicon　growth　rate　and　energy　consumption　both　increase　with　the　velocity　of　the　inlet-gas　becoming　larger.　The　deposition　rate　of　silicon　increases　along　the　rod　at　first　but　decreases　after　reaching　a　maximum.