A　CVD　model　of　polysilicon　in　Trichlorosilane-Hydrogen　system　is　established,　coupling　gas　phase　reactions　and　surface　reactions　by　Chemkin　4.0,　then　numerical　solution　by　CFD　software　Fluent　6.3.26　is　made.　According　to　model　results,　silicon　growth　rate　curves　regarding　gas　inlet　temperature,　gas　composition,　surface　temperature　and　reaction　pressure　are　plotted,　addressing　silicon　growth　rate　with　different　conditions　while　the　model　for　this　deposition　process　has　been　compared　to　experimental　and　calculated　data　obtained　from　literature.　As　a　result,　assuming　all　other　conditions　constant,　silicon　growth　rate　increases　with　increase　of　surface　temperature,　reactor　pressure　as　well　as　gas　inlet　temperature,　when　hydrogen　mole　fraction　is　less　than　0.8,　silicon　growth　rate　is　proportional　to　hydrogen　mole　fraction,　when　more　than　0.8,　silicon　growth　rate　is　on　the　contrary.