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author:

Xiong, Tinghui (Xiong, Tinghui.) [1] | Cai, Wenhan (Cai, Wenhan.) [2] | Miao, Yu (Miao, Yu.) [3] | Chen, Chenlong (Chen, Chenlong.) [4]

Indexed by:

EI PKU CSCD

Abstract:

The simultaneous epitaxial growth of vertical nanorod arrays and thin films of zinc oxide (ZnO) was realized on a gold-plated plane sapphire substrate via a simple chemical vapor deposition method. In this nanostructure, the vertical single crystal nanorods are hexagonal prism or cylindrical in shape, and are all grown on a ZnO thin film, so that the vertical nanorods are connected to each other through the beneath thin oxide ZnO film. In comparison with ZnO nanofilms, the prepared nanostructure has excellent photoelectrochemistry (PEC) performance with an incident photocurrent efficiency of 2.4 times that of the simple ZnO nanofilms; while its light energy conversion efficiency is 5 times that of ZnO nanofilms. Its excellent PEC performance can be attributed to its high surface area-to-volume ratio and the carrier transport channel provided by the supporter ZnO film. The mechanism for cooperative growth of ZnO nanorod arrays and thin films was proposed as follows: during the processing, Au liquefies and absorbs Zn atoms in the atmosphere forming alloys. After the alloy droplets were supersaturated ZnO begins to nucleate, and then ZnO film formed on the surface of the substrate. At the same time, Zn autocatalyzed (vapor-solid)VS growth and Au catalyzed (vapor-liquid-solid)VLS growth occurred, respectively forming hexagonal prism nanorods and cylindrical nanorods, and finally a vertical nanorod array was connected through the underneath thin ZnO film. © 2022 Chinese Journal of Materials Research. All rights reserved.

Keyword:

Chemical vapor deposition Conversion efficiency II-VI semiconductors Incident light Metallic films Nanorods Oxide films Photoelectrochemical cells Prisms Sapphire Single crystals Thin films Zinc oxide

Community:

  • [ 1 ] [Xiong, Tinghui]College of Chemistry, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Xiong, Tinghui]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou; 350002, China
  • [ 3 ] [Cai, Wenhan]College of Chemistry, Fuzhou University, Fuzhou; 350108, China
  • [ 4 ] [Cai, Wenhan]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou; 350002, China
  • [ 5 ] [Miao, Yu]College of Chemistry, Fuzhou University, Fuzhou; 350108, China
  • [ 6 ] [Miao, Yu]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou; 350002, China
  • [ 7 ] [Chen, Chenlong]Key Laboratory of Optoelectronic Materials Chemistry and Physics, Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Science, Fuzhou; 350002, China

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Source :

Chinese Journal of Materials Research

ISSN: 1005-3093

CN: 21-1328/TG

Year: 2022

Issue: 7

Volume: 36

Page: 481-488

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count: 1

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 6

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