W/TiO2/ITO　thin　film　resistive　random　access　memory,　including　TiO2　film　and　electrode　layers　was　prepared　by　magnetron　sputtering　method.　The　film　was　characterized　by　atomic　force　microscopy,　X-ray　diffraction,　X-ray　photoelectron　spectroscopy.　The　testing　results　show　that　the　surface　morphology　of　deposited　TiO2　thin　film　is　smooth　and　dense;　the　structure　of　the　film　is　mainly　amorphous　phase　with　a　small　amount　of　crystallized　rutile　(110)　planes;　the　ratio　of　titanium　and　oxygen　is　1:1.92　and　few　oxygen　vacancies　exist　inside　the　film.　The　device　displays　a　stable　bipolar　resistive　switching　behavior　in　electrical　testing　with　VSet　around　0.92　V　and　VReset　around　-0.82　V.　The　stable　memory　window　and　fine　retention　performance　are　also　found　in　electrical　testing.　By　analyzing　the　linear　fitting　for　I-V　curve,　it　is　believed　that　the　resistive　switching　is　governed　by　conducting　filament.　Further　study　showed　that　the　conducting　filament　is　formed　by　Tungsten　atoms,　i.e.,　the　redox　reaction　and　the　migration　of　Tungsten　atoms　in　TiO2　film　under　a　bias　cause　the　formation　and　rupture　of　conducting　filaments.