ZnO:Al　(ZAO)　transparent　conductive　thin　films　were　sputtered　on　glass　substrates　by　RF　magnetron　sputtering　with　ZnO　ceramic　target　mixed　with　Al2O3　of　2　wt%.　The　influence　of　sputtering　power　on　the　structural,　optical　and　electrical　performance　of　ZAO　films　were　characterized　by　X-ray　diffraction　(XRD),　atomic　force　microscope　(AFM),　UV-Vis　spectrograph　and　Van　der　Pauw　method.　The　results　indicate　that　the　different　sputtering　power　has　little　influence　on　the　light　transmittance,　but　there　are　greater　effects　on　film　crystallization　and　electrical　properties.　c-axis　orientation　of　ZAO　films　in　(002)　direction　was　distinctly　observed　by　XRD.　The　average　visible　(about　400-600　nm)　transmittance　was　more　than　85%.　The　optimum　electrical　property　of　ZAO　film　was　prepared　at　sputtering　power　of　120　W.　©,　2015,　Journal　of　Functional　Materials.　All　right　reserved.