Translated Title
Effects of sputtering power on Al doped ZnO thin films deposited by RF magnetron sputtering
Translated Abstract
ZnO∶Al (ZAO)transparent conductive thin films were sputtered on glass substrates by RF magne-tron sputtering with ZnO ceramic target mixed with Al2 O 3 of 2wt%.The influence of sputtering power on the structural,optical and electrical performance of ZAO films were characterized by X-ray diffraction (XRD), atomic force microscope (AFM),UV-Vis spectrograph and Van der Pauw method.The results indicate that the different sputtering power has little influence on the light transmittance,but there are greater effects on film crystallization and electrical properties.c-axis orientation of ZAO films in (002 )direction was distinctly ob-served by XRD.The average visible (about 400-600 nm)transmittance was more than 85%.The optimum elec-trical property of ZAO film was prepared at sputtering power of 120 W.
Translated Keyword
sputtering power
square resistance
transmittance
ZAO thin films
Access Number
WF:perioarticalgncl201508006
