Resistance　memory　devices　using　patterned　graphene:polymer　as　active　layerand　with　ITO　(indium　tin　oxide)/graphene:polymer/Al　cross　bar　sandwich　structure　were　fabricated　by　spin-coating,　lithography　and　thermal　evaporation.　The　patterned　active　layer　was　achieved　by　using　photosensitive　polymer　as　organic　matrix.　The　graphene　concentration　was　optimized　to　obtain　the　best　rewritable　nonvolatile　memory　effect.　The　mechanism　for　the　resistance　switch　effect　was　also　discussed.　It　was　found　that　the　device　fabricated　with　the　graphene　concentration　at　0.01wt%　showed　not　only　the　best　memory　performance　with　a　large　on/off　ratio　of　8.9×103,　but　also　satisfactory　retention　characteristics.　Current-voltage　analyswas　suggests　that　it　was　the　carriers　captured　and　released　by　graphene　that　lead　to　the　resistance　switch　effect.　©,　2015,　Journal　of　Functional　Materials.　All　right　reserved.