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author：

Jia, H. (Jia, H..) [1] | Zhang, H. (Zhang, H..) [2] | Cheng, S. (Cheng, S..) [3] | Yu, J. (Yu, J..) [4] | Lai, Y. (Lai, Y..) [5]

Indexed by：

EI

Abstract：

Cu2SnS3　(CTS)　thin　films　were　grown　by　sulfurization　of　vacuum　thermal　evaporated　Sn-Cu　metallic　precursors　in　a　H2S:N2　atmosphere.　Different　Cu/Sn　composition　ratios　of　the　films　were　prepared　to　study　the　effect　of　Cu/Sn　atomic　ratio　on　the　properties　of　the　CTS　thin　films.　The　microstructures　and　Cu/Sn　composition　ratios　of　the　films　were　characterized　with　X-ray　diffraction　and　energy　dispersive　X-ray　spectroscopy　(EDS),　respectively.　The　X-ray　diffractograms　show　that　the　deposited　films　are　exclusively　oriented　along　the　(111)　direction.　The　optical　absorption　coefficient　and　band　gap　of　the　films　were　estimated　by　transmission　and　reflection　spectra　measured　at　room　temperature.　Highly　crystallized　p-type　CTS　thin　films　were　achieved　when　the　Cu/Sn　ratio　was　about　2.0.　They　had　high　absorption　coefficient　of　~104　cm-1,　suitable　carrier　concentration　~1017　cm-3,　high　mobility　~100cm2v-1s-1　and　narrow　optical　band　gap　~0.9　eV.　Therefore,　CTS　thin　films　are　suitable　as　absorber　materials　of　thin　film　solar　cells.

Keyword：

Binary alloys Carrier concentration Copper metallography Energy dispersive spectroscopy Energy gap Hall mobility Hole mobility Light absorption Semiconducting tin compounds Thin films Thin film solar cells

Community：

  • [ 1 ] [Jia, H.]College of Physics and Information Engineering, And Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 2 ] [Jia, H.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou; 213164, China
  • [ 3 ] [Zhang, H.]College of Physics and Information Engineering, And Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 4 ] [Zhang, H.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou; 213164, China
  • [ 5 ] [Cheng, S.]College of Physics and Information Engineering, And Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 6 ] [Cheng, S.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou; 213164, China
  • [ 7 ] [Yu, J.]College of Physics and Information Engineering, And Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 8 ] [Yu, J.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou; 213164, China
  • [ 9 ] [Lai, Y.]College of Physics and Information Engineering, And Institute of Micro-Nano Devices and Solar Cells, Fuzhou University, Fuzhou; 350108, China
  • [ 10 ] [Lai, Y.]Jiangsu Collaborative Innovation Center of Photovolatic Science and Engineering, Changzhou; 213164, China

Reprint 's Address：

  • [cheng, s.]college of physics and information engineering, and institute of micro-nano devices and solar cells, fuzhou university, fuzhou; 350108, china;;[cheng, s.]jiangsu collaborative innovation center of photovolatic science and engineering, changzhou; 213164, china

Email：


sycheng@fzu.edu.cn
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Source ：

Journal of Optoelectronics and Advanced Materials

ISSN： 1454-4164

Year： 2016

Issue： 9-10

Volume： 18

Page： 863-867

0 . 4 4 9

JCR@2016

0 . 6 0 0

JCR@2023

ESI HC Threshold：324

JCR Journal Grade：4

CAS Journal Grade：4

Cited Count：

WoS CC Cited Count：

SCOPUS Cited Count：

ESI Highly Cited Papers on the List： 0 Unfold All

WanFang Cited Count：

Chinese Cited Count：

30 Days PV： 1

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