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author:

Ren, Xiao-Xia (Ren, Xiao-Xia.) [1] | Shen, Feng-Juan (Shen, Feng-Juan.) [2] | Lin, Xin-You (Lin, Xin-You.) [3] | Zheng, Rui-Lun (Zheng, Rui-Lun.) [4]

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EI PKU CSCD

Abstract:

Considering the anharmonic vibrations and the interactions between electron and phonon of atoms, in this article we study the temperature dependence of Grüneisen parameter, thermal expansion coefficient at low temperature and phonon relaxation time by using the theory and method of solid state physics. The influences of the anharmonic vibration of the atom on the above parameters are further discussed. The obtained results are as follows. 1) The thermal expansion coefficient of graphene is a negative value when the temperature drops below room temperature. The absolute value of the thermal expansion coefficient of graphene increases monotonically with the increase of temperature. The thermal expansion coefficient of graphene is -3.64 × 10-6 K-1 at room temperature. 2) The value of Grüneisen parameter is zero in the harmonic approximation. If the anharmonic vibration is considered, the Grüneisen parameter will increase slowly with the increase of temperature. Its value is between 1.40 and1.42 and the change is almost linear. And we find that the influence of the second anharmonic term is less than that of the first anharmonic term on Grüneisen parameter. 3) The phonon relaxation time decreases with the increase of temperature. The rate changes rapidly at low temperature (T © 2017 Chinese Physical Society.

Keyword:

Graphene Phonons Relaxation time Temperature distribution Thermal expansion

Community:

  • [ 1 ] [Ren, Xiao-Xia]College of Electronic and Electrical Engineering, Electronic Engineering Research Center of New Energy Storage Devices and Applications, Chongqing University of Arts and Sciences, Chongqing; 402160, China
  • [ 2 ] [Shen, Feng-Juan]College of Electronic and Electrical Engineering, Electronic Engineering Research Center of New Energy Storage Devices and Applications, Chongqing University of Arts and Sciences, Chongqing; 402160, China
  • [ 3 ] [Lin, Xin-You]School of Mechanical Engineering and Automation, Fuzhou University, Fuzhou; 350000, China
  • [ 4 ] [Zheng, Rui-Lun]College of Electronic and Electrical Engineering, Electronic Engineering Research Center of New Energy Storage Devices and Applications, Chongqing University of Arts and Sciences, Chongqing; 402160, China

Reprint 's Address:

  • [zheng, rui-lun]college of electronic and electrical engineering, electronic engineering research center of new energy storage devices and applications, chongqing university of arts and sciences, chongqing; 402160, china

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Source :

Acta Physica Sinica

ISSN: 1000-3290

Year: 2017

Issue: 22

Volume: 66

0 . 6 6 9

JCR@2017

0 . 8 0 0

JCR@2023

ESI HC Threshold:170

JCR Journal Grade:4

CAS Journal Grade:4

Cited Count:

WoS CC Cited Count:

SCOPUS Cited Count:

ESI Highly Cited Papers on the List: 0 Unfold All

WanFang Cited Count:

Chinese Cited Count:

30 Days PV: 2

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