A design of high PSRR CMOS voltage reference based on subthreshold MOSFETs - Details

author：

Huang Shizhen (Huang Shizhen.) ^[1] (Scholars：黄世震) | Lin Wei (Lin Wei.) ^[2] (Scholars：林伟) | Chen Wangsheng (Chen Wangsheng.) ^[3] | Lin Weiming (Lin Weiming.) ^[4] | Lu Peimin (Lu Peimin.) ^[5] (Scholars：陆培民)

Indexed by：

CPCI-S EI Scopus

Abstract：

Based　on　the　principle　of　subthreshold　voltage　references,　a　voltage　reference　circuitry　with　high　PSRR　is　proposed　in　this　work.　In　HSPICE　the　simulation　result　shows　that　the　PSRR　performance　of　the　circuit　is　very　good　as　they　are　53dB　at　100KHz,　35dB　at　100AMz　and　the　max　is　close　to　92dB,　the　reference　voltage　is　706.92　+/-　1.16mV　and　the　average　temperature　coefficient　is　12.9ppm/degrees　C　at　the　5V　supply　voltage　as　well　as　the　range　of　-55　degrees　C　to　+125　degrees　C.　Moreover,　the　current　dissipation　is　not　more　than　1.6　mu　A　at　5V.

Keyword：

high PSRR self-boost structure subthreshold voltage reference

Community：

[ 1 ] [Huang Shizhen]Fuzhou Univ, Fujian key Lab Microelect & Integrated Circuit, Fuzhou 350002, Fujian Province, Peoples R China
[ 2 ] [Lin Wei]Fuzhou Univ, Fujian key Lab Microelect & Integrated Circuit, Fuzhou 350002, Fujian Province, Peoples R China
[ 3 ] [Chen Wangsheng]Fuzhou Univ, Fujian key Lab Microelect & Integrated Circuit, Fuzhou 350002, Fujian Province, Peoples R China
[ 4 ] [Lin Weiming]Fuzhou Univ, Fujian key Lab Microelect & Integrated Circuit, Fuzhou 350002, Fujian Province, Peoples R China
[ 5 ] [Lu Peimin]Fuzhou Univ, Fujian key Lab Microelect & Integrated Circuit, Fuzhou 350002, Fujian Province, Peoples R China