A design of high PSRR CMOS voltage reference based on subthreshold MOSFETs - Details

author：

Huang, S. (Huang, S..) ^[1] | Lin, W. (Lin, W..) ^[2] | Chen, W. (Chen, W..) ^[3] | Lu, P. (Lu, P..) ^[5]

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Abstract：

Based　on　the　principle　of　subthreshold　voltage　references,　a　voltage　reference　circuitry　with　high　PSRR　is　proposed　in　this　work.　In　HSPICE　the　simulation　result　shows　that　the　PSRR　performance　of　the　circuit　is　very　good　as　they　are　53dB　at　100KHz　,　35dB　at　100MHz　and　the　max　is　close　to　92dB　,　the　reference　voltage　is　706.92±1.16mV　and　the　average　temperature　coefficient　is　12.9　ppm/°C　at　the　5V　supply　voltage　as　well　as　the　range　of　-55°C　to　+125°C.　Moreover,　the　current　dissipation　is　not　more　than　1.6μA　at　5V.　©2008　IEEE.

Keyword：

High PSRR; Self-boost structure; Subthreshold; Voltage reference

Community：

[ 1 ] [Huang, S.]Fujian Key Laboratory of Microelectronics and Integrated Circuits, Fuzhou University, Fujian Province, 350002, China
[ 2 ] [Lin, W.]Fujian Key Laboratory of Microelectronics and Integrated Circuits, Fuzhou University, Fujian Province, 350002, China
[ 3 ] [Chen, W.]Fujian Key Laboratory of Microelectronics and Integrated Circuits, Fuzhou University, Fujian Province, 350002, China
[ 4 ] [Lin, W.]Fujian Key Laboratory of Microelectronics and Integrated Circuits, Fuzhou University, Fujian Province, 350002, China
[ 5 ] [Lu, P.]Fujian Key Laboratory of Microelectronics and Integrated Circuits, Fuzhou University, Fujian Province, 350002, China

Reprint 's Address：

[Huang, S.]Fujian Key Laboratory of Microelectronics and Integrated Circuits, Fuzhou University, Fujian Province, 350002, China

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Source ：

2008 3rd IEEE Conference on Industrial Electronics and Applications, ICIEA 2008

Year： 2008

Page： 2495-2498

Language： English

Cited Count：

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SCOPUS Cited Count： 8

ESI Highly Cited Papers on the List： 0 Unfold All

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Chinese Cited Count：

30 Days PV： 1

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