SnS　and　Ag　films　were　deposited　on　glass　Substrates　by　vacuum　thermal　evaporation　successively,　then　the),　were　annealed　in　N2　ambience　at　a　temperature　of　300　degrees　C　for　2h.　By　controlling　the　Ag　evaporation　voltage　to　roughly　alter　content　of　Ag　in　SnS　films,　different　Ag-doped　SnS　films　were　obtained.　The　microstructures,　composition　and　properties　of　the　films　were　characterized　with　X-ray　diffraction　(XRD),　atomic　force　microscopy(AFM)　and　some　other　methods.　With　the　increase　of　Ag　evaporation　Voltage　(V-Ag),　there　exist　new　phases　of　A(g8)SnS(6)　and　Ag2S,　whose　intensity　of　diffraction　peaks　increases　with　the　increasing　Ag-dopant,　and　the　average　roughness　of　the　films　varies　from　18.7nm　to　23.6nm,　and　grain　size　increases　from　192nm　to　348nm.　With　the　increase　Of　V-Ag　the　evaluated　direct　band　gap　Eg　of　the　films　decreases　from　2.28eV(undoped)　to　2.05eV　(V-Ag=70V),　the　carrier　concentration　value　and　Hall　mobility　of　the　films　diminishes　from　2.048x10(14)cm(-3)　and　25.96　cm(2).v(-2).s(-1)　to　1.035x10(16)　cm(-3)　and　5.66　cm(2).v(-2).s(-1),　respectively;　while　the　resistivity　of　the　films　decreases　sharply　from　1174　Omega.cm(undoped)　to　107　Omega.cm　(V-Ag=70V).　All　the　films　are　of　p-type　conductivity.　The　above　results　show　that　the　semiconducting　properties　of　the　SnS　films　have　been　improved　by　silver-doping.