SnS　and　Ag　films　were　deposited　on　glass　substrates　by　vacuum　thermal　evaporation　successively,　then　they　were　annealed　in　N2　ambience　at　a　temperature　of　300　°C　for　2h.　By　controlling　the　Ag　evaporation　voltage　to　roughly　alter　content　of　Ag　in　SnS　films,　different　Ag-doped　SnS　films　were　obtained.　The　microstructures,　composition　and　properties　of　the　films　were　characterized　with　X-ray　diffraction　(XRD),　atomic　force　microscopy(AFM)　and　some　other　methods.　With　the　increase　of　Ag　evaporation　voltage　(V　Ag),　there　exist　new　phases　of　Ag8SnS6　and　Ag2S,　whose　intensity　of　diffraction　peaks　increases　with　the　increasing　Ag-dopant,　and　the　average　roughness　of　the　films　varies　from　18.7nm　to　23.6nm,　and　grain　size　increases　from　192nm　to　348nm.　With　the　increase　of　VAg,　the　evaluated　direct　band　gap　Eg　of　the　films　decreases　from　2.28eV(undoped)　to　2.05eV　(VAg=70V),　the　carrier　concentration　value　and　Hall　mobility　of　the　films　diminishes　from　2.048×10　14cm-3　and　25.96　cm2.v-2.s　-1　to　1.035×1016　cm-3　and　5.66　cm　2.v-2.s-1,　respectively;　while　the　resistivity　of　the　films　decreases　sharply　from　1174Ω.cm(undoped)　to　107Ω.cm　(VAg=70V).　All　the　films　are　of　p-type　conductivity.　The　above　results　show　that　the　semiconducting　properties　of　the　SnS　films　have　been　improved　by　silver-doping.　©　2009　Trans　Tech　Publications,　Switzerland.